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Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process |
| Shu-Zhen Yu(于淑珍)1, Yan Song(宋焱)1,2, Jian-Rong Dong(董建荣)1, Yu-Run Sun(孙玉润)1, Yong-Ming Zhao(赵勇明)1,3, Yang He(何洋)1,3 |
1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China;
2 Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China |
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Abstract Low metal-graphene contact resistance is important in making high-performance graphene devices. In this work, we demonstrate a lower specific contact resistivity of Au0.88 Ge0.12/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts. The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance. Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance. The specific contact resistivity decreases from 2.5×10-4 to 7.8×10-5 Ω·cm2 by pre-annealing at 300℃ for one hour, and continues to decrease to 9.5×10-7 Ω·cm2 after post-annealing at 490℃ for 60 seconds. These approaches provide reliable means of lowering contact resistance.
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Received: 19 May 2016
Revised: 02 August 2016
Accepted manuscript online:
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PACS:
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81.05.ue
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(Graphene)
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73.40.Ns
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(Metal-nonmetal contacts)
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61.72.Bb
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(Theories and models of crystal defects)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61376065) and the Science and Technology Project of Suzhou, China (Grant No. ZXG2013044). |
Corresponding Authors:
Shu-Zhen Yu
E-mail: szyu2010@sinano.ac.cn
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Cite this article:
Shu-Zhen Yu(于淑珍), Yan Song(宋焱), Jian-Rong Dong(董建荣), Yu-Run Sun(孙玉润), Yong-Ming Zhao(赵勇明), Yang He(何洋) Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process 2016 Chin. Phys. B 25 118101
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