Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

doi:10.1088/1674-1056/24/6/067301

Abstract Models for calculating the sheet densities of two-dimensional electron gas (2DEG) induced by spontaneous and piezoelectric polarization in AlGaN/GaN, AlGaN/AlN/GaN, and GaN/AlGaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.

Keywords: high electron mobility transistors GaN two-dimensional electron gas polarization effect

Received: 05 November 2014
Revised: 06 December 2014
Accepted manuscript online:

PACS:

73.40.-c

(Electronic transport in interface structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61377020, 61376089, 61223005, and 61176126) and the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017).

Corresponding Authors: Zhao De-Gang
E-mail: dgzhao@red.semi.ac.cn

About author: 73.40.-c

Cite this article:

He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生) Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression 2015 Chin. Phys. B 24 067301

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Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression

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