Threshold switching uniformity in In2Se3 nanowire-based phase change memory

doi:10.1088/1674-1056/24/5/057702

Abstract The uniformity of threshold voltage and threshold current in the In₂Se₃ nanowire-based phase change memory (PCM) devices is investigated. Based on the trap-limited transport model, amorphous layer thickness, trap density, and trap depth are considered to clarify their influences upon the threshold voltage and threshold current through simulations.

Keywords: phase change memory nanowire trap-limited model threshold voltage

Received: 14 November 2014
Revised: 09 December 2014
Accepted manuscript online:

PACS:	77.80.Fm	(Switching phenomena)
	85.30.-z	(Semiconductor devices)
	78.66.Jg	(Amorphous semiconductors; glasses)
	85.30.-z	(Semiconductor devices)

Fund: Project supported by the National Basic Research Program of China (Grant No. 2011CBA00604).

Corresponding Authors: Liu Xiao-Yan
E-mail: xyliu@ime.pku.edu.cn

About author: 77.80.Fm; 85.30.-z; 78.66.Jg; 85.30.-z

Cite this article:

Chen Jian (陈键), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦) Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory 2015 Chin. Phys. B 24 057702

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Threshold switching uniformity in In₂Se₃ nanowire-based phase change memory