Perfect GMR effect in gapped graphene-based ferromagnetic—normal—ferromagnetic junctions

doi:10.1088/1674-1056/24/4/047305

Abstract We investigate the quantum transport property in gapped graphene-based ferromagnetic/normal/ferromagnetic (FG/NG/FG) junctions by using Dirac-Bogoliubov-de Gennes equation. The graphene is fabricated on SiC and BN substrates separately, so carriers in FG/NG/FG structures are considered as massive relativistic particles. Transmission probability, charge, and spin conductances are studied as a function of exchange energy of ferromagnets (h), size of graphene gap, and thickness of normal graphene region (L) respectively. Using the experimental values of Fermi energy in the normal graphene part (E_FN～ 400 meV) and energy gap in graphene (260 meV for SiC and 50 meV for BN substrate), it is shown that this structure can be used for both spin-up and spin-down polarized current. The latter case has different behavior of gapped FG/NG/FG from that of gapless FG/NG/FG structures. Also perfect charge giant magnetoresistance is observed in a range of E_FN-mv_F²<h<E_FN+mv_F².

Keywords: graphene spin-polarized current giant magnetoresistance nanoscale structures

Received: 17 September 2014
Revised: 13 November 2014
Accepted manuscript online:

PACS:	73.63.-b	(Electronic transport in nanoscale materials and structures)
	72.25.-b	(Spin polarized transport)
	72.80.Vp	(Electronic transport in graphene)

Corresponding Authors: Hossein Karbaschi
E-mail: h.karbaschi@sci.ui.ac.ir

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Hossein Karbaschi, Gholam Reza Rashedi Perfect GMR effect in gapped graphene-based ferromagnetic—normal—ferromagnetic junctions 2015 Chin. Phys. B 24 047305

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Perfect GMR effect in gapped graphene-based ferromagnetic—normal—ferromagnetic junctions

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