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Chin. Phys. B, 2015, Vol. 24(10): 107704    DOI: 10.1088/1674-1056/24/10/107704

C–H complex defects and their influence in ZnO single crystal

Xie Hui (谢辉), Zhao You-Wen (赵有文), Liu Tong (刘彤), Dong Zhi-Yuan (董志远), Yang Jun (杨俊), Liu Jing-Ming (刘京明)
Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional SemiconductorMaterials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  Infrared absorption local vibration mode (LVM) spectroscopy is used to study hydrogen related defects in n-type ZnO single crystal grown by a closed chemical vapor transport (CVT) method under Zn-rich growth conditions, in which carbon is used as a transport agent. Two C-H complex related absorption peaks at 2850 cm-1 and 2919 cm-1 are detected in the sample. The formation of the C-H complex implies an effect of carbon donor passivation and formation suppression of H donor in ZnO. The influence of the complex defects on the electrical property of the CVT-ZnO is discussed based on Hall measurement results and residual impurity analysis.
Keywords:  ZnO      defects      infrared absorption      local vibrational mode (LVM)  
Received:  30 March 2015      Revised:  04 May 2015      Accepted manuscript online: 
PACS:  77.55.hf (ZnO)  
  91.60.Ed (Crystal structure and defects, microstructure)  
  07.57.Hm (Infrared, submillimeter wave, microwave, and radiowave sources)  
  63.20.Pw (Localized modes)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61474104).
Corresponding Authors:  Zhao You-Wen     E-mail:

Cite this article: 

Xie Hui (谢辉), Zhao You-Wen (赵有文), Liu Tong (刘彤), Dong Zhi-Yuan (董志远), Yang Jun (杨俊), Liu Jing-Ming (刘京明) C–H complex defects and their influence in ZnO single crystal 2015 Chin. Phys. B 24 107704

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