Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/ac11e4

Abstract AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with heavy ions at various fluences. After irradiation by 2.1 GeV¹⁸¹ Ta³²⁺ ions, the electrical characteristics of the devices significantly decreased. The threshold voltage shifted positively by approximately 25% and the saturation currents decreased by approximately 14%. Defects were induced in the band gap and the interface between the gate and barrier acted as tunneling sites, which increased the gate current tunneling probability. According to the pulsed output characteristics, the amount of current collapse significantly increased and more surface state traps were introduced after heavy ion irradiation. The time constants of the induced surface traps were mainly less than 10 μs.

Keywords: gallium nitride radiation effects defects pulse testing

Received: 02 June 2021
Revised: 02 July 2021
Accepted manuscript online: 07 July 2021

PACS:	61.80.-x	(Physical radiation effects, radiation damage)
	61.72.uj	(III-V and II-VI semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 12035019 and 11690042) and Science Challenge Projects (Grant No. TZ2018004).

Corresponding Authors: Ling Lu
E-mail: llv@xidian.edu.cn

Cite this article:

Zheng-Zhao Lin(林正兆), Ling Lü(吕玲), Xue-Feng Zheng(郑雪峰), Yan-Rong Cao(曹艳荣), Pei-Pei Hu(胡培培), Xin Fang(房鑫), and Xiao-Hua Ma(马晓华) Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors 2022 Chin. Phys. B 31 036103

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Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors

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