Please wait a minute...
Chin. Phys. B, 2014, Vol. 23(8): 088110    DOI: 10.1088/1674-1056/23/8/088110
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition

Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Yang Hao-Yu (杨皓宇), Lü You (吕游), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林)
State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
Abstract  The initial growth stage of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition (MOCVD) is investigated. The dependence of the nucleation on growth temperature, growth pressure, and vapor V/Ⅲ ratio is studied by means of atomic force microscopy. The nucleation characteristics include the island density, size, and size uniformity distribution. The nucleation mechanism is discussed by the effects of growth temperature, growth pressure, and vapor V/Ⅲ ratio on the density, size, and size uniformity of GaSb islands. With the growth temperature increasing from 500 ℃ to 610 ℃ and the growth pressure increasing from 50 mbar to 1000 mbar (1 mbar = 105 Pa), the island density first increases and then decreases; with the V/Ⅲ ratio increasing from 0.5 to 3, the trend is contrary.
Keywords:  MOCVD      GaSb      nucleation  
Received:  19 January 2014      Revised:  04 April 2014      Accepted manuscript online: 
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  81.15.Kk (Vapor phase epitaxy; growth from vapor phase)  
  81.05.Ea (III-V semiconductors)  
  81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076010) and the State Key Laboratory Program on Integrated Optoelectronics, China (Grant No. IOSKL2012ZZ13).
Corresponding Authors:  Zhang Yuan-Tao, Zhang Bao-Lin     E-mail:  zhangyt@jlu.edu.cn;zbl@jlu.edu.cn

Cite this article: 

Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Yang Hao-Yu (杨皓宇), Lü You (吕游), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林) Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition 2014 Chin. Phys. B 23 088110

[1] Kouichi Akahane, Naokatsu Yamamoto, Shin-ichiro Gozu, Akio Ueta and Naoki Ohtani 2005 J. Cryst. Growth 283 297
[2] Tian Y, Zhang B L, Zhou T M, Jiang H and Jin Y X 1999 Solid State Electronics 43 1723
[3] Yang H Y, Liu R J, Wang L K, LüY, Li T T, Li G X, Zhang Y T and Zhang B L 2013 Chin. Phys. B 22 108402
[4] Laghumavarapu R B, Moscho A, Khoshakhlagh A, El-Emawy M, Lester L F and Huffaker D L 2007 Appl. Phys. Lett. 90 173125
[5] Geller M, Kapteyn C, Muller-Kirsch L, Heitz R and Bimberg D 2003 Phys. Status Solidi B 238 258
[6] Zhang S H, Wang L, Shi Z W, Tian H T, Gao H J, Wang W X, Chen H, Li H T and Zhao L C 2012 Appl. Phys. Lett. 100 251908
[7] Brad P Tinkham, Wolfgang Braun, Vladimir M Kaganer, Dillip K Satapathy, Bernd Jenichen and Klaus H Ploog 2007 Surf. Sci. 601 814
[8] Nowozin T, Marent A, Bonato L, Schliwa A and Bimb D 2012 Phys. Rev. B 86 035305
[9] Sun C K, Wang G, Bowers J E, Brar B, Blank H R, Kroemer H and Pilkuhn M H 1996 Appl. Phys. Lett. 68 1543
[10] Born H, Muller-Kirsch L, Heitz R, Hoffmann A and Bimberg D 2001 Phys. Status Solidi B 228 R4
[11] Gradkowski K, Pavarelli N, Ochalski T J, Williams D P, Tatebayashi J, Huyet G, OReilly E P and Huffaker D L 2009 Appl. Phys. Lett. 95 061102
[12] Zhang S H, Wang L, Shi Z W, Tian H T, Gao H J, Wang W X, Chen H, Li H T and Zhao L C 2012 Appl. Phys. Lett. 100 251908
[13] Rouhani M Djafari, Kassem H, Torre J Dalla, Landa G, Rocher A and Estéve D 2002 Mater. Sci. Eng. B 88 181
[14] Motlan, Butcher, KSA and Goldys E M 2011 Mater. Chem. Phys. 81 8
[15] Sitnikova A A, Lublinskaya O G, Toropov A A, Rykhova O V, Konnikov S G and Ivanov S V 2004 Appl. Surf. Sci. 234 28
[16] Takuya Kawazu, Takeshi Noda, Takaaki Mano, Yoshiki Sakuma and Hiroyuki Sakaki 2013 J. Cryst. Growth 378 475
[17] Liu G Z and Zhu Y N 1982 J. Synth. Cryst. 2 1 (in Chinese)
[18] Kotaro Zaima, Rei Hashimoto, Mizunori Ezaki, Masao Nishioka and Yasuhiko Arakawa 2008 J. Cryst. Growth 310 4843
[19] Howe P, Le Ru E C, Clarke E, Abbey B, Murray R and Jones T S 2004 J. Appl. Phys. 95 2998
[20] Tinkham Brad P, Braun Wolfgang, Kaganer Vladimir M, Satapathy Dillip K, Jenichen Bernd and Ploog Klaus H 2007 Surf. Sci. 601 814
[1] Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Chin. Phys. B, 2023, 32(3): 037303.
[2] Different roles of surfaces' interaction on lattice mismatched/matched surfaces in facilitating ice nucleation
Xuanhao Fu(傅宣豪) and Xin Zhou(周昕). Chin. Phys. B, 2023, 32(2): 028202.
[3] Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation
Jian-Ying Yue(岳建英), Xue-Qiang Ji(季学强), Shan Li(李山), Xiao-Hui Qi(岐晓辉), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2023, 32(1): 016701.
[4] Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy
Fang-Qi Lin(林芳祁), Nong Li(李农), Wen-Guang Zhou(周文广), Jun-Kai Jiang(蒋俊锴), Fa-Ran Chang(常发冉), Yong Li(李勇), Su-Ning Cui(崔素宁), Wei-Qiang Chen(陈伟强), Dong-Wei Jiang(蒋洞微), Hong-Yue Hao(郝宏玥), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), and Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2022, 31(9): 098504.
[5] A 4×4 metal-semiconductor-metal rectangular deep-ultraviolet detector array of Ga2O3 photoconductor with high photo response
Zeng Liu(刘增), Yu-Song Zhi(支钰崧), Mao-Lin Zhang(张茂林), Li-Li Yang(杨莉莉), Shan Li(李山), Zu-Yong Yan(晏祖勇), Shao-Hui Zhang(张少辉), Dao-You Guo(郭道友), Pei-Gang Li(李培刚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2022, 31(8): 088503.
[6] Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique
Ren-Jie Liu(刘仁杰), Jia-Jie Lin(林家杰), Zheng-Hao Shen(沈正皓), Jia-Liang Sun(孙嘉良), Tian-Gui You(游天桂), Jin Li(李进), Min Liao(廖敏), and Yi-Chun Zhou(周益春). Chin. Phys. B, 2022, 31(7): 076103.
[7] Wet etching and passivation of GaSb-based very long wavelength infrared detectors
Xue-Yue Xu(许雪月), Jun-Kai Jiang(蒋俊锴), Wei-Qiang Chen(陈伟强), Su-Ning Cui(崔素宁), Wen-Guang Zhou(周文广), Nong Li(李农), Fa-Ran Chang(常发冉), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Dong-Wei Jiang(蒋洞微), Dong-Hai Wu(吴东海), Hong-Yue Hao(郝宏玥), and Zhi-Chuan Niu(牛智川). Chin. Phys. B, 2022, 31(6): 068503.
[8] Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD
Xiaotao Hu(胡小涛), Yimeng Song(宋祎萌), Zhaole Su(苏兆乐), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Yang Jiang(江洋), Yangfeng Li(李阳锋), and Hong Chen(陈弘). Chin. Phys. B, 2022, 31(3): 038103.
[9] Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
Zhaojun Liu(刘昭君), Lian-Qing Zhu(祝连庆), Xian-Tong Zheng(郑显通), Yuan Liu(柳渊), Li-Dan Lu(鹿利单), and Dong-Liang Zhang(张东亮). Chin. Phys. B, 2022, 31(12): 128503.
[10] A study of cavitation nucleation in pure water using molecular dynamics simulation
Hua Xie(谢华), Yuequn Xu(徐跃群), and Cheng Zhong(钟成). Chin. Phys. B, 2022, 31(11): 114701.
[11] Strain-tuned magnetic properties in (Ga,Fe)Sb: First-principles study
Feng-Chun Pan(潘凤春), Xue-Ling Lin(林雪玲), and Xu-Ming Wang(王旭明). Chin. Phys. B, 2021, 30(9): 096105.
[12] Suppression of ice nucleation in supercooled water under temperature gradients
Li-Ping Wang(王利平), Wei-Liang Kong(孔维梁), Pei-Xiang Bian(边佩翔), Fu-Xin Wang(王福新), and Hong Liu(刘洪). Chin. Phys. B, 2021, 30(6): 068203.
[13] High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film
Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). Chin. Phys. B, 2021, 30(5): 057301.
[14] Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers
Yong Li(李勇), Xiao-Ming Li(李晓明), Rui-Ting Hao(郝瑞亭), Jie Guo(郭杰), Yu Zhuang(庄玉), Su-Ning Cui(崔素宁), Guo-Shuai Wei(魏国帅), Xiao-Le Ma(马晓乐), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川), and Yao Wang(王耀). Chin. Phys. B, 2021, 30(2): 028504.
[15] Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si
Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮). Chin. Phys. B, 2021, 30(11): 118101.
No Suggested Reading articles found!