| INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si |
| Jian-Kai Xu(徐健凯)1,2,3,4, Li-Juan Jiang(姜丽娟)1,2,3,4,†, Qian Wang(王茜)1,2,3,4, Quan Wang(王权)1,5,6, Hong-Ling Xiao(肖红领)1,2,3,4, Chun Feng(冯春)1,2,3,4, Wei Li(李巍)1,2,3,4, and Xiao-Liang Wang(王晓亮)1,2,3,4 |
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China;
4 Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China;
5 The State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;
6 Institute of Novel Semiconductors, Shandong University, Jinan 250100, China |
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Abstract The effect of nitrogen flow and growth temperature on extension of GaN on Si substrate has been studied. By increasing the nitrogen flow whose outlet is located in the center of the MOCVD (metal-organic chemical vapor deposition) gas/particle screening flange and by increasing the growth temperature of HT-AlN and AlGaN buffer layers near the primary flat of the wafer, the GaN layer has extended more adequately on Si substrate. In the meantime, the surface morphology has been greatly improved. Both the AlN and GaN crystal quality uniformity has been improved. X-ray diffraction results showed that the GaN (0002) XRD FWHMs (full width at half maximum) decreased from 579 arcsec～ 1655 arcsec to around 420 arcsec.
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Received: 19 March 2021
Revised: 15 April 2021
Accepted manuscript online: 08 May 2021
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PACS:
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81.05.Ea
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.70.Dm
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(X-ray absorption spectra)
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0402900) and the National Natural Sciences Foundation of China (Grant No. 62074144). |
Corresponding Authors:
Li-Juan Jiang, Xiao-Liang Wang
E-mail: ljjiang@semi.ac.cn;xlwang@semi.ac.cn
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Cite this article:
Jian-Kai Xu(徐健凯), Li-Juan Jiang(姜丽娟), Qian Wang(王茜), Quan Wang(王权), Hong-Ling Xiao(肖红领), Chun Feng(冯春), Wei Li(李巍), and Xiao-Liang Wang(王晓亮) Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si 2021 Chin. Phys. B 30 118101
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