Direct measurement of the interfacial barrier height of the manganite p-n heterojunction

doi:10.1088/1674-1056/23/4/047301

Abstract A manganite p-n heterojunction composed of La_0.67Sr_0.33MnO₃ film and 0.05 wt% Nb-doped SrTiO₃ substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R-1/T curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.

Keywords: manganite heterojunction interfacial barrier

Received: 25 July 2013
Revised: 17 October 2013
Accepted manuscript online:

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	73.40.Ei	(Rectification)
	75.47.Gk	(Colossal magnetoresistance)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

Corresponding Authors: Wang Deng-Jing
E-mail: d.j.wang@163.com

About author: 73.40.Lq; 73.40.Ei; 75.47.Gk

Cite this article:

Wang Mei (王妹), Wang Deng-Jing (王登京), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝) Direct measurement of the interfacial barrier height of the manganite p-n heterojunction 2014 Chin. Phys. B 23 047301

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Direct measurement of the interfacial barrier height of the manganite p-n heterojunction

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