Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

doi:10.1088/1674-1056/23/4/046804

Abstract We propose a modified thermal oxidation method in which an Al₂O₃ capping layer is used as an oxygen blocking layer (OBL) to form an ultrathin GeO_x interfacial layer, and obtain a superior Al₂O₃/GeO_x/Ge gate stack. The GeO_x interfacial layer is formed in oxidation reaction by oxygen passing through the Al₂O₃ OBL, in which the Al₂O₃ layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeO_x interfacial layer would dramatically decrease as the thickness of Al₂O₃ OBL increases, which is beneficial to achieving an ultrathin GeO_x interfacial layer to satisfy the demand for small equivalent oxide thickness (EOT). In addition, the thickness of the GeO_x interfacial layer has little influence on the passivation effect of the Al₂O₃/Ge interface. Ge (100) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) using the Al₂O₃/GeO_x/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off (I_on/I_off) ratio of above 1× 10⁴, a subthreshold slope of ～ 120 mV/dec, and a peak hole mobility of 265 cm²/V· s are achieved.

Keywords: GeO_x interfacial layer thermal oxidation GeO desorption Al₂O₃

Received: 03 August 2013
Revised: 23 October 2013
Accepted manuscript online:

PACS:	68.35.Ct	(Interface structure and roughness)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00605 and 2011CBA00607), the National Natural Science Foundation of China (Grant No. 61204103), and the National Science & Technology MajorProject of China (Grant No. 2011ZX02708-003).

Corresponding Authors: Wang Sheng-Kai, Liu Hong-Gang
E-mail: wangshengkai@ime.ac.cn;liuhonggang@ime.ac.cn

About author: 68.35.Ct; 73.40.Qv; 85.30.Tv

Cite this article:

Han Le (韩乐), Wang Sheng-Kai (王盛凯), Zhang Xiong (张雄), Xue Bai-Qing (薛百清), Wu Wang-Ran (吴汪然), Zhao Yi (赵毅), Liu Hong-Gang (刘洪刚) Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge 2014 Chin. Phys. B 23 046804

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Effect of ultrathin GeOx interfacial layer formed by thermal oxidation on Al2O3 capped Ge

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Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al₂O₃ capped Ge