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Interactions between vacancies and prismatic Σ3 grain boundary in α-Al2O3: First principles study |
Fei Wang(王飞)1,2, Wen-Sheng Lai(赖文生)1, Ru-Song Li(李如松)2, Bin He(何彬)2, Su-Fen Li(黎素芬)2 |
1 Laboratory of Advanced Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
2 Xi’an High Technology Research Center, Xi’an 710025, China |
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Abstract Interactions between vacancies and Σ3 prismatic screw-rotation grain boundary in α-Al2O3 are investigated by the first principles projector-augmented wave method. It turns out that the vacancy formation energy decreases with reducing the distance between vacancy and grain boundary (GB) plane and reaches the minimum on the GB plane (at the atomic layer next to the GB) for an O (Al) vacancy. The O vacancy located on the GB plane can attract other vacancies nearby to form an O-O di-vacancy while the Al vacancy cannot. Moreover, the O-O di-vacancy can further attract other O vacancies to form a zigzag O vacancy chain on the GB plane, which may have an influence on the diffusion behavior of small atoms such as H and He along the GB plane of α-Al2O3.
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Received: 19 December 2015
Revised: 19 January 2016
Accepted manuscript online:
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PACS:
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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68.35.-p
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(Solid surfaces and solid-solid interfaces: structure and energetics)
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68.90.+g
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(Other topics in structure, and nonelectronic properties of surfaces and interfaces; thin films and low-dimensional structures)
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Fund: Project supported by the National Key Basic Research and Technology Program, China (Grant No. 2010CB731601) and the National Natural Science Foundation of China (Grant No. 50871057). |
Corresponding Authors:
Wen-Sheng Lai
E-mail: wslai@tsinghua.edu.cn
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Cite this article:
Fei Wang(王飞), Wen-Sheng Lai(赖文生), Ru-Song Li(李如松), Bin He(何彬), Su-Fen Li(黎素芬) Interactions between vacancies and prismatic Σ3 grain boundary in α-Al2O3: First principles study 2016 Chin. Phys. B 25 066804
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