Please wait a minute...
Chin. Phys. B, 2017, Vol. 26(5): 057702    DOI: 10.1088/1674-1056/26/5/057702

Performance and reliability improvement of La2O3/Al2O3 nanolaminates using ultraviolet ozone post treatment

Ji-Bin Fan(樊继斌)1, Hong-Xia Liu(刘红侠)2, Bin Sun(孙斌)1, Li Duan(段理)1, Xiao-Chen Yu(于晓晨)1
1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However, the hygroscopic nature of La2O3 hampers its application as dielectrics in electron devices. To cope with this challenge, ultraviolet (UV) ozone post treatment is proposed to suppress the moisture absorption in the H2O-based atomic layer deposition (ALD) La2O3/Al2O3 nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing. The x-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (AFM) results indicate that the moisture absorption of the H2O-based ALD La2O3/Al2O3 nanolaminates is efficiently suppressed after 600 ℃ annealing, and the electrical characteristics are greatly improved.

Keywords:  La2O3/Al2O3 nanolaminates      atomic layer deposition      ultraviolet ozone post treatment      annealing  
Received:  12 December 2016      Revised:  29 January 2017      Accepted manuscript online: 
PACS:  77.55.D-  
  82.80.Pv (Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))  

Project supported by the National Natural Science Foundation of China (Grant Nos. 61604016 and 51501017) and the Fundamental Research Funds for the Central Universities, China (Grant No. 310831161003).

Corresponding Authors:  Ji-Bin Fan     E-mail:

Cite this article: 

Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Bin Sun(孙斌), Li Duan(段理), Xiao-Chen Yu(于晓晨) Performance and reliability improvement of La2O3/Al2O3 nanolaminates using ultraviolet ozone post treatment 2017 Chin. Phys. B 26 057702

[1] Gupta S, Gong X, Zhang R, Yeo Y C, Takagi S and Saraswat K C 2014 MRS Bull. 39 678
[2] McDaniel M D, Ngo T Q, Hu S, Posadas A, Demkov A A and Ekerdt J G 2015 Appl. Phys. Rev. 2 041301
[3] Fei C X, Liu H X, Wang X, Zhao D D, Wang S L and Chen S P 2016 Chin. Phys. B 25 058106
[4] Kim J, Kim H C, Wallace R M and Park T J 2012 ECS Trans. 45 95
[5] Choi M, Janotti A and Walle C G V D 2013 Phys. Rev. B 88 214117
[6] Lim S G, Kriventsov S, Jackson T N, Haeni J H, Schlom D G, Balbashov A M, Uecker R, Reiche P, Freeouf J L and Lucovsky G 2002 J. Appl. Phys. 91 4500
[7] Fan J B, Liu H X, Ma F, Zhuo Q Q and Hao Y 2013 Chin. Phys. B 22 027702
[8] Li X, Mao X, Feng M, Qi S, Jiang B and Zhang L 2016 J Eur. Ceram. Soc. 36 2549
[9] Zhao Y, Kita K, Kyuno K and Toriumi A 2007 Jpn. J. Appl. Phys. 46 4189
[10] Wang X, Liu H X, Fei C X, Yin S Y and Fan X J 2015 Nanoscale Res. Let. 10 1
[11] Zhao Y, Kita K, Kyuno K and Toriumi A 2007 Jpn. J. Appl. Phys. 46 1
[12] Song W J, So S K, Wang D, Qiu Y and Cao L 2001 Appl. Surf. Sci. 177 158
[13] Nieminen M, Putkonen M and Niinistö L 2001 Appl. Surf. Sci. 174 155
[14] Kim H, Woo S, Lee J, Kim H, Kim Y, Lee H and Jeon H 2010 J Electrochem. Soc. 157 479
[15] Kraut E A, Grant R W, Waldrop J R and Kowalczyk S P 1983 Phys. Rev. B 28 1965
[16] Fan J B, Liu H X, Gao B, Ma F, Zhuo Q Q and Hao Y 2012 Chin. Phys. B 21 087702
[17] Fortunato E, Barquinha P and Martins R. 2012 Adv. Mater. 24 2945
[18] Chang I Y, You S, Juan P, Wang M and Lee J Y 2009 IEEE Electron Device Lett. 30 161
[1] Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique
Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Chin. Phys. B, 2022, 31(9): 097401.
[2] Phosphorus diffusion and activation in fluorine co-implanted germanium after excimer laser annealing
Chen Wang(王尘), Wei-Hang Fan(范伟航), Yi-Hong Xu(许怡红), Yu-Chao Zhang(张宇超), Hui-Chen Fan(范慧晨), Cheng Li(李成), and Song-Yan Cheng(陈松岩). Chin. Phys. B, 2022, 31(9): 098503.
[3] Introducing voids around the interlayer of AlN by high temperature annealing
Jianwei Ben(贲建伟), Jiangliu Luo(罗江流), Zhichen Lin(林之晨), Xiaojuan Sun(孙晓娟), Xinke Liu(刘新科), and Xiaohua Li(黎晓华). Chin. Phys. B, 2022, 31(7): 076104.
[4] Designing high k dielectric films with LiPON—Al2O3 hybrid structure by atomic layer deposition
Ze Feng(冯泽), Yitong Wang(王一同), Jilong Hao(郝继龙), Meiyi Jing(井美艺), Feng Lu(卢峰), Weihua Wang(王维华), Yahui Cheng(程雅慧), Shengkai Wang(王盛凯), Hui Liu(刘晖), and Hong Dong(董红). Chin. Phys. B, 2022, 31(5): 057701.
[5] Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers
Xiao-Bo He(何小波), Hua-Tian Hu(胡华天), Ji-Bo Tang(唐继博), Guo-Zhen Zhang(张国桢), Xue Chen(陈雪), Jun-Jun Shi(石俊俊), Zhen-Wei Ou(欧振伟), Zhi-Feng Shi(史志锋), Shun-Ping Zhang(张顺平), Chang Liu(刘昌), and Hong-Xing Xu(徐红星). Chin. Phys. B, 2022, 31(1): 017803.
[6] Construction and mechanism analysis on nanoscale thermal cloak by in-situ annealing silicon carbide film
Jian Zhang(张健), Hao-Chun Zhang(张昊春), Zi-Liang Huang(黄子亮), Wen-Bo Sun(孙文博), and Yi-Yi Li(李依依). Chin. Phys. B, 2022, 31(1): 014402.
[7] Protection of isolated and active regions in AlGaN/GaN HEMTs using selective laser annealing
Mingchen Hou(侯明辰), Gang Xie(谢刚), Qing Guo(郭清), and Kuang Sheng(盛况). Chin. Phys. B, 2021, 30(9): 097302.
[8] In-situ TEM observation of the evolution of helium bubbles in Mo during He+ irradiation and post-irradiation annealing
Yi-Peng Li(李奕鹏), Guang Ran(冉广), Xin-Yi Liu(刘歆翌), Xi Qiu(邱玺), Qing Han(韩晴), Wen-Jie Li(李文杰), and Yi-Jia Guo(郭熠佳). Chin. Phys. B, 2021, 30(8): 086109.
[9] Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors
Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇). Chin. Phys. B, 2021, 30(7): 077303.
[10] Fabrication and characterization of Al-Mn superconducting films for applications in TES bolometers
Qing Yu(余晴), Yi-Fei Zhang(张翼飞), Chang-Hao Zhao(赵昌昊), Kai-Yong He(何楷泳), Ru-Tian Huang(黄汝田), Yong-Cheng He(何永成), Xin-Yu Wu(吴歆宇), Jian-She Liu(刘建设), and Wei Chen(陈炜). Chin. Phys. B, 2021, 30(7): 077402.
[11] Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films
Qi-Xun Guo(郭奇勋), Zhong-Xu Ren(任中旭), Yi-Ya Huang(黄意雅), Zhi-Chao Zheng(郑志超), Xue-Min Wang(王学敏), Wei He(何为), Zhen-Dong Zhu(朱振东), and Jiao Teng(滕蛟). Chin. Phys. B, 2021, 30(6): 067307.
[12] Understanding the synergistic effect of mixed solvent annealing on perovskite film formation
Kun Qian(钱昆), Yu Li(李渝), Jingnan Song(宋静楠), Jazib Ali, Ming Zhang(张明), Lei Zhu(朱磊), Hong Ding(丁虹), Junzhe Zhan(詹俊哲), and Wei Feng(冯威). Chin. Phys. B, 2021, 30(6): 068103.
[13] Characterization and application in XRF of HfO2-coated glass monocapillary based on atomic layer deposition
Yan-Li Li(李艳丽), Ya-Bing Wang(王亚冰), Wei-Er Lu(卢维尔), Xiang-Dong Kong(孔祥东), Li Han(韩立), and Hui-Bin Zhao(赵慧斌). Chin. Phys. B, 2021, 30(5): 050703.
[14] Quantum annealing for semi-supervised learning
Yu-Lin Zheng(郑玉鳞), Wen Zhang(张文), Cheng Zhou(周诚), and Wei Geng(耿巍). Chin. Phys. B, 2021, 30(4): 040306.
[15] Design and fabrication of GeAsSeS chalcogenide waveguides with thermal annealing
Limeng Zhang(张李萌), Jinbo Chen(陈锦波), Jierong Gu(顾杰荣), Yixiao Gao(高一骁), Xiang Shen(沈祥), Yimin Chen(陈益敏), and Tiefeng Xu(徐铁峰). Chin. Phys. B, 2021, 30(3): 034210.
No Suggested Reading articles found!