CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Performance and reliability improvement of La2O3/Al2O3 nanolaminates using ultraviolet ozone post treatment |
Ji-Bin Fan(樊继斌)1, Hong-Xia Liu(刘红侠)2, Bin Sun(孙斌)1, Li Duan(段理)1, Xiao-Chen Yu(于晓晨)1 |
1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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Abstract La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However, the hygroscopic nature of La2O3 hampers its application as dielectrics in electron devices. To cope with this challenge, ultraviolet (UV) ozone post treatment is proposed to suppress the moisture absorption in the H2O-based atomic layer deposition (ALD) La2O3/Al2O3 nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing. The x-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (AFM) results indicate that the moisture absorption of the H2O-based ALD La2O3/Al2O3 nanolaminates is efficiently suppressed after 600 ℃ annealing, and the electrical characteristics are greatly improved.
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Received: 12 December 2016
Revised: 29 January 2017
Accepted manuscript online:
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PACS:
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77.55.D-
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82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61604016 and 51501017) and the Fundamental Research Funds for the Central Universities, China (Grant No. 310831161003). |
Corresponding Authors:
Ji-Bin Fan
E-mail: jbfan@chd.edu.cn
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Cite this article:
Ji-Bin Fan(樊继斌), Hong-Xia Liu(刘红侠), Bin Sun(孙斌), Li Duan(段理), Xiao-Chen Yu(于晓晨) Performance and reliability improvement of La2O3/Al2O3 nanolaminates using ultraviolet ozone post treatment 2017 Chin. Phys. B 26 057702
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