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Chin. Phys. B, 2013, Vol. 22(2): 027305    DOI: 10.1088/1674-1056/22/2/027305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench

Wang Pei (王沛), Luo Xiao-Rong (罗小蓉), Jiang Yong-Heng (蒋永恒), Wang Qi (王琦), Zhou Kun (周坤), Wu Li-Juan (吴丽娟), Wang Xiao-Wei (王骁玮), Cai Jin-Yong (蔡金勇), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Xia-Rong (胡夏融), Fan Yuan-Hang (范远航), Wei Jie (魏杰), Zhang Bo (张波)
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  An ultra-low specific on-resistance trench gate vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench (HK TG VDMOS) is proposed in this paper. The HK TG VDMOS features a high-k (HK) trench below the trench gate. Firstly, the extended HK trench not only causes an assistant depletion of the n-drift region, but also optimizes the electric field, which therefore reduces Ron,sp and increases the breakdown voltage (BV). Secondly, the extended HK trench weakens the sensitivity of BV to the n-drift doping concentration. Thirdly, compared with the super-junction (SJ) vertical double-diffused metal-oxide semiconductor (VDMOS), the new device is simplified in fabrication by etching and filling the extended trench. The HK TG VDMOS with BV=172 V and Ron,sp=0.85 mΩ·cm2 is obtained by simulation; its Ron,sp is reduced by 67% and 40% and its BV is increased by about 15% and 5%, in comparison with those of the conventional trench gate VDMOS (TG VDMOS) and conventional superjunction trench gate VDMOS(SJ TG CDMOS).
Keywords:  high permittivity      specific on-resistance      breakdown voltage      trench gate  
Received:  19 April 2012      Revised:  08 July 2012      Accepted manuscript online: 
PACS:  73.40.Ty (Semiconductor-insulator-semiconductor structures)  
  73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)  
  73.61.Ng (Insulators)  
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60806025 and 61176069 ) and the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-11-0062).
Corresponding Authors:  Luo Xiao-Rong     E-mail:  xrluo@uestc.edu.cn

Cite this article: 

Wang Pei (王沛), Luo Xiao-Rong (罗小蓉), Jiang Yong-Heng (蒋永恒), Wang Qi (王琦), Zhou Kun (周坤), Wu Li-Juan (吴丽娟), Wang Xiao-Wei (王骁玮), Cai Jin-Yong (蔡金勇), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Xia-Rong (胡夏融), Fan Yuan-Hang (范远航), Wei Jie (魏杰), Zhang Bo (张波) Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench 2013 Chin. Phys. B 22 027305

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