0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-y buffers

doi:10.1088/1674-1056/22/2/026802

Abstract Single-junction, lattice-mismatched In_0.69Ga_0.31As thermophotovoltaic (TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition (MOCVD). Compositionally undulating step-graded InAs_yP_1-y buffer layers with a lattice mismatch of ～1.2%, are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate. With an optimized buffer thickness, the In_0.69Ga_0.31As active layers grown on the buffer displayed a high crystal quality with no measurable tetragonal distortion. High-performance single-junction devices are demonstrated, with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm², which are measured under the standard solar simulator of air mass 1.5-global (AM 1.5 G).

Keywords: In_0.69Ga_0.39As thermophotovoltaic devices InAs_yP_1-y buffer

Received: 09 June 2012
Revised: 17 July 2012
Accepted manuscript online:

PACS:	68.55.ag	(Semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	88.40.hj	(Efficiency and performance of solar cells)
	88.40.jm	(Thin film III-V and II-VI based solar cells)

Fund: Project supported by the National Basic Research Program of China (Grant No. 61176128); the Knowledge Innovation Project of the Chinese Academy of Sciences (Grant No. KGCX2-YW-324); and Suzhou Municipal Solar Cell Research Project, China (Grant No. SYG201145).

Corresponding Authors: Lu Shu-Long
E-mail: sllu2008@sinano.ac.cn

Cite this article:

Ji Lian (季莲), Lu Shu-Long (陆书龙), Jiang De-Sheng (江德生), Zhao Yong-Ming (赵勇明), Tan Ming (谭明), Zhu Ya-Qi (朱亚棋), Dong Jian-Rong (董建荣 ) 0.6-eV bandgap In_0.69Ga_0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP_1-y buffers 2013 Chin. Phys. B 22 026802

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0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-y buffers

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0.6-eV bandgap In_0.69Ga_0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP_1-y buffers