Digital and analog memory devices based on 2D layered  MPS3 ( M=Mn, Co, Ni) materials

doi:10.1088/1674-1056/abd397

Abstract We demonstrate digital and analog devices with an Ag/MPS₃/Au structure based on layered MPS₃ (M=Mn, Co, Ni) 2D materials. All devices show the bipolar behavior of resistive switching. In addition, Ag/MnPS₃/Au and Ag/NiPS₃/Au devices show synaptic characteristics of potentiation and depression. The digital and analog characteristics of resistance states enable Ag/MPS₃/Au devices to work as both binary memory and artificial synapse devices. The Ag/MPS₃/Au memory devices are promising for applications of flexible eye-like and brain-like systems on a chip when they are integrated with photodetectors and FETs composed of full MPS₃ materials.

Keywords: electrochemical metallization memory memristor 2D materials neuromorphic computing

Received: 04 October 2020
Revised: 18 November 2020
Accepted manuscript online: 15 December 2020

PACS:	73.61.-r	(Electrical properties of specific thin films)
	68.37.-d	(Microscopy of surfaces, interfaces, and thin films)
	68.55.ag	(Semiconductors)

Fund: Project supported by the National Key R&D Program of China (Grant Nos. 2017YFA0206200 and 2018YFB2202601) and the National Natural Science Foundation of China (Grant Nos. 61674173, 61834005, and 61902443).

Corresponding Authors: ^†Corresponding author. E-mail: kexi@gdut.edu.cn ^‡Corresponding author. E-mail: yuzhiyi@mail.sysu.edu.cn

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Guihua Zhao(赵贵华), Li Wang(王力), Xi Ke(柯曦), and Zhiyi Yu(虞志益) Digital and analog memory devices based on 2D layered MPS₃ ( M=Mn, Co, Ni) materials 2021 Chin. Phys. B 30 047303

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1. Supporting Information.pdf(395KB)

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Digital and analog memory devices based on 2D layered MPS3 ( M=Mn, Co, Ni) materials

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Digital and analog memory devices based on 2D layered MPS₃ ( M=Mn, Co, Ni) materials