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Chin. Phys. B, 2018, Vol. 27(8): 086802    DOI: 10.1088/1674-1056/27/8/086802
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Prev   Next  

Fabrication of seeded substrates for layer transferrable silicon films

Ji-Zhou Li(李纪周)1,2, Wei Zhang(张伟)2, Jing-Yuan Yan(鄢靖源)1,2, Cong Wang(王聪)2, Hong-Fei Chen(陈宏飞)1, Xiao-Yuan Chen(陈小源)2, Dong-Fang Liu(刘东方)2
1 School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China;
2 Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
Abstract  The layer transfer process is one of the most promising methods for low-cost and highly-efficient solar cells, in which transferrable mono-crystalline silicon thin wafers or films can be produced directly from gaseous feed-stocks. In this work, we show an approach to preparing seeded substrates for layer-transferrable silicon films. The commercial silicon wafers are used as mother substrates, on which periodically patterned silicon rod arrays are fabricated, and all of the surfaces of the wafers and rods are sheathed by thermal silicon oxide. Thermal evaporated aluminum film is used to fill the gaps between the rods and as the stiff mask, while polymethyl methacrylate (PMMA) and photoresist are used as the soft mask to seal the gap between the filled aluminum and the rods. Under the joint resist of the stiff and soft masks, the oxide on the rod head is selectively removed by wet etching and the seed site is formed on the rod head. The seeded substrate is obtained after the removal of the masks. This joint mask technique will promote the endeavor of the exploration of mechanically stable, unlimitedly reusable substrates for the kerfless technology.
Keywords:  seeded substrate      layer transfer      joint mask      filler      silicon film  
Received:  15 March 2018      Revised:  12 April 2018      Accepted manuscript online: 
PACS:  68.55.ag (Semiconductors)  
  81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  81.16.Rf (Micro- and nanoscale pattern formation)  
  81.16.-c (Methods of micro- and nanofabrication and processing)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11374313) and the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 11504392).{These authors contributed equally.} aisebox{\ht\strutbox}{\hypertarget{ccauthor}} ^\ddag
Corresponding Authors:  Hong-Fei Chen, Dong-Fang Liu     E-mail:  hfchen@i.shu.edu.cn;liudf@sari.ac.cn

Cite this article: 

Ji-Zhou Li(李纪周), Wei Zhang(张伟), Jing-Yuan Yan(鄢靖源), Cong Wang(王聪), Hong-Fei Chen(陈宏飞), Xiao-Yuan Chen(陈小源), Dong-Fang Liu(刘东方) Fabrication of seeded substrates for layer transferrable silicon films 2018 Chin. Phys. B 27 086802

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