Fabrication of GaAs/SiO2/Si and GaAs/Si heterointerfaces by surface-activated chemical bonding at room temperature

doi:10.1088/1674-1056/abf917

Abstract The room-temperature (RT) bonding mechanisms of GaAs/SiO₂/Si and GaAs/Si heterointerfaces fabricated by surface-activated bonding (SAB) are investigated using a focused ion beam (FIB) system, cross-sectional scanning transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDX) and scanning acoustic microscopy (SAM). According to the element distribution detected by TEM and EDX, it is found that an intermixing process occurs among different atoms at the heterointerface during the RT bonding process following the surface-activation treatment. The diffusion of atoms at the interface is enhanced by the point defects introduced by the process of surface activation. We can confirm that through the point defects, a strong heterointerface can be created at RT. The measured bonding energies of GaAs/SiO₂/Si and GaAs/Si wafers are 0.7 J/m² and 0.6 J/m². The surface-activation process can not only remove surface oxides and generate dangling bonds, but also enhance the atomic diffusivity at the interface.

Keywords: surface-activation bonding energy-dispersive x-ray spectroscopy intermix point defects

Received: 11 March 2021
Revised: 13 April 2021
Accepted manuscript online: 19 April 2021

PACS:	68.55.ag	(Semiconductors)
	81.10.-h	(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
	81.16.Rf	(Micro- and nanoscale pattern formation)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61505003 and 61674140), the Beijing Education Commission Project (Grant No. SQKM201610005008), and Beijing Postdoctoral Research Foundation (Grant No. 2020-Z2-043).

Corresponding Authors: Zhiyong Wang
E-mail: zyw_bjut@126.com

Cite this article:

Rui Huang(黄瑞), Tian Lan(兰天), Chong Li(李冲), Jing Li(李景), and Zhiyong Wang(王智勇) Fabrication of GaAs/SiO₂/Si and GaAs/Si heterointerfaces by surface-activated chemical bonding at room temperature 2021 Chin. Phys. B 30 076802

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Fabrication of GaAs/SiO2/Si and GaAs/Si heterointerfaces by surface-activated chemical bonding at room temperature

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Fabrication of GaAs/SiO₂/Si and GaAs/Si heterointerfaces by surface-activated chemical bonding at room temperature