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Chin. Phys. B, 2017, Vol. 26(11): 116802    DOI: 10.1088/1674-1056/26/11/116802

Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate

Lu Zhang(张璐), Hai-Yang Hong(洪海洋), Yi-Sen Wang(王一森), Cheng Li(李成), Guang-Yang Lin(林光杨), Song-Yan Chen(陈松岩), Wei Huang(黄巍), Jian-Yuan Wang(汪建元)
Department of Physics, OSED, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

Polycrystalline Ge1-xSnx (poly-Ge1-xSnx) alloy thin films with high Sn content (> 10%) were fabricated by co-sputtering amorphous GeSn (a-GeSn) on Ge (100) wafers and subsequently pulsed laser annealing with laser energy density in the range of 250 mJ/cm2 to 550 mJ/cm2. High quality poly-crystal Ge0.90Sn0.10 and Ge0.82Sn0.18 films with average grain sizes of 94 nm and 54 nm were obtained, respectively. Sn segregation at the grain boundaries makes Sn content in the poly-GeSn alloys slightly less than that in the corresponding primary a-GeSn. The crystalline grain size is reduced with the increase of the laser energy density or higher Sn content in the primary a-GeSn films due to the booming of nucleation numbers. The Raman peak shift of Ge-Ge mode in the poly crystalline GeSn can be attributed to Sn substitution, strain, and disorder. The dependence of Raman peak shift of the Ge-Ge mode caused by strain and disorder in GeSn films on full-width at half-maximum (FWHM) is well quantified by a linear relationship, which provides an effective method to evaluate the quality of poly-Ge1-xSnx by Raman spectra.

Keywords:  polycrystalline GeSn      high-Sn content      pulsed laser annealing      disorder  
Received:  28 June 2017      Revised:  29 July 2017      Accepted manuscript online: 
PACS: (Semiconductors)  
  61.66.Dk (Alloys )  
  81.15.Fg (Pulsed laser ablation deposition)  
  74.62.En (Effects of disorder)  

Project supported by the National Natural Science Foundation of China (Grant No. 61474094) and the National Basic Research Program of China (Grant No. 2013CB632103).

Corresponding Authors:  Cheng Li     E-mail:

Cite this article: 

Lu Zhang(张璐), Hai-Yang Hong(洪海洋), Yi-Sen Wang(王一森), Cheng Li(李成), Guang-Yang Lin(林光杨), Song-Yan Chen(陈松岩), Wei Huang(黄巍), Jian-Yuan Wang(汪建元) Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate 2017 Chin. Phys. B 26 116802

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