0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz

doi:10.1088/1674-1056/22/12/128503

Abstract In this paper, 0.15-μm gate-length In_0.52Al_0.48As/In_0.53Ga_0.47As InP-based high electron mobility transistors (HEMTs) each with a gate-width of 2×50 μm are designed and fabricated. Their excellent DC and RF characterizations are demonstrated. Their full channel currents and extrinsic maximum transconductance (g_m,max) values are measured to be 681 mA/mm and 952 mS/mm, respectively. The off-state gate-to-drain breakdown voltage (BV_GD) defined at a gate current of-1 mA/mm is 2.85 V. Additionally, a current-gain cut-off frequency (f_T) of 164 GHz and a maximum oscillation frequency (f_max) of 390 GHz are successfully obtained; moreover, the f_max of our device is one of the highest values in the reported 0.15-μm gate-length lattice-matched InP-based HEMTs operating in a millimeter wave frequency range. The high g_m,max, BV_GD, f_max, and channel current collectively make this device a good candidate for high frequency power applications.

Keywords: breakdown voltage cut-off frequency high electron mobility transistors maximum oscillation frequency

Received: 06 March 2013
Revised: 08 April 2013
Accepted manuscript online:

PACS:	85.30.-z	(Semiconductor devices)
	73.40.Qv	(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Basic Research Program of China (Grant Nos. 2010CB327502 and 2010CB327505) and the Advance Research Project (Grant No. 5130803XXXX).

Corresponding Authors: Jin Zhi
E-mail: jinzhi@ime.ac.cn

Cite this article:

Zhong Ying-Hui (钟英辉), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Wang Xian-Tai (王显泰), Lü Hong-Liang (吕红亮), Liu Xin-Yu (刘新宇), Jin Zhi (金智) 0.15-μm T-gate In_0.52Al_0.48As/In_0.53Ga_0.47As InP-based HEMT with f_max of 390 GHz 2013 Chin. Phys. B 22 128503

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0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz

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0.15-μm T-gate In_0.52Al_0.48As/In_0.53Ga_0.47As InP-based HEMT with f_max of 390 GHz