Microwave damage susceptibility trend of bipolar transistor as a function of frequency

doi:10.1088/1674-1056/21/9/098502

Abstract We conduct a theoretical study of the damage susceptibility trend of a typical bipolar transistor induced by high-power microwave (HPM) as a function of frequency. The dependences of the burnout time and the damage power on the signal frequency are obtained. Studies of the internal damage process and the mechanism of the device are carried out from the variation analysis of the distribution of the electric field, current density, and temperature. The investigation shows that the burnout time linearly depends on the signal frequency. The current density and the electric field at the damage position decrease with increasing frequency. Meanwhile, the temperature elevation occurs in the area between the p-n junction and the n-n⁺ interface due to the increase of the electric field. Adopting the data analysis software, the relationship between the damage power and the frequency is obtained. Moreover, the thickness of the substrate has a significant effect on the burnout time.

Keywords: bipolar transistor high-power microwave frequency

Received: 04 March 2012
Revised: 05 April 2012
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

Corresponding Authors: Ma Zhen-Yang
E-mail: zyma@mail.xidian.edu.cn

Cite this article:

Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Chen Bin (陈斌), Song Kun (宋坤), Zhao Ying-Bo (赵颖博) Microwave damage susceptibility trend of bipolar transistor as a function of frequency 2012 Chin. Phys. B 21 098502

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