Influence of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition

doi:10.1088/1674-1056/21/8/087702

Abstract Based on X-ray photoelectron spectroscopy (XPS), influences of different oxidants on band alignment of HfO₂ films deposited by atomic layer deposition (ALD) are investigated in this paper. The measured valence band offset (VBO) value for H₂O-based HfO₂ increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O₃-based HfO₂ decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H₂O-based and O₃-based HfO₂ films after annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO₂ and SiO₂ after annealing may lead the VBO values of H₂O-based and O₃-based HfO₂ to vary in different ways, which is in agreement with the varition of flat band (V_FB) voltage.

Keywords: HfO₂ band alignment annealing X-ray photoelectron spectroscopy dipoles

Received: 12 January 2012
Revised: 13 February 2012
Accepted manuscript online:

PACS:	77.55.D-
	82.80.Pv.

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 61076097) and the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083).

Corresponding Authors: Fan Ji-Bin
E-mail: jbfan@mail.xidian.edu.cn

Cite this article:

Fan Ji-Bin (樊继斌), Liu Hong-Xia (刘红侠), Gao Bo (高博), Ma Fei (马飞), Zhuo Qing-Qing (卓青青), Hao Yue (郝跃) Influence of different oxidants on band alignment of HfO₂ films deposited by atomic layer deposition 2012 Chin. Phys. B 21 087702

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Influence of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition

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Influence of different oxidants on band alignment of HfO₂ films deposited by atomic layer deposition