Determination of band alignment between GaOx and boron doped diamond for a selective-area-doped termination structure

doi:10.1088/1674-1056/ac464e

Abstract An n-GaO_x thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction. The n-GaO_x thin film presents a small surface roughness and a large optical band gap of 4.85 eV. In addition, the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties. The GaO_x/diamond heterojunction shows a type-II staggered band configuration, where the valence and conduction band offsets are 1.28 eV and 1.93 eV, respectively. These results confirm the feasibility of the use of n-GaO_x as a termination structure for diamond power devices.

Keywords: GaO_x boron-doped diamond edge termination band alignment

Received: 14 September 2021
Revised: 13 December 2021
Accepted manuscript online: 24 December 2021

PACS:	81.05.ug	(Diamond)
	85.30.Kk	(Junction diodes)
	84.30.Jc	(Power electronics; power supply circuits)
	71.20.-b	(Electron density of states and band structure of crystalline solids)

Fund: Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B0101690001).

Corresponding Authors: Shao-Heng Cheng, Liu-An Li
E-mail: chengshaoheng@jlu.edu.cn;liliuan@jlu.edu.cn

Cite this article:

Qi-Liang Wang(王启亮), Shi-Yang Fu(付诗洋), Si-Han He(何思翰), Hai-Bo Zhang(张海波),Shao-Heng Cheng(成绍恒), Liu-An Li(李柳暗), and Hong-Dong Li(李红东) Determination of band alignment between GaO_x and boron doped diamond for a selective-area-doped termination structure 2022 Chin. Phys. B 31 088104

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Determination of band alignment between GaOx and boron doped diamond for a selective-area-doped termination structure

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Determination of band alignment between GaO_x and boron doped diamond for a selective-area-doped termination structure