A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS

doi:10.1088/1674-1056/21/7/078502

Abstract A new analytical model for the surface electric field distribution and breakdown voltage of the silicon on insulator (SOI) trench lateral double-diffused metal-oxide-semiconductor (LDMOS) is presented. Based on the two-dimensional Laplace solution and Poisson solution, the model considers the influence of structure parameters, such as the doping concentration of the drift region and the depth and width of the trench, on the surface electric field. Further, a simple analytical expression of the breakdown voltage is obtained, which offers an effective way to gain an optimal high voltage. All analytical results are in good agreement with the simulation results.

Keywords: silicon on insulator (SOI) trench lateral double-diffused metal-oxide-semiconductor (LDMOS) breakdown voltage

Received: 01 December 2011
Revised: 27 December 2011
Accepted manuscript online:

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 60976060) and the National Key Laboratory of Analogue Integrated Circuit, China (Grant No. 9140C090304110C0905).

Corresponding Authors: Hu Xia-Rong
E-mail: h1_x2_r3@126.com

Cite this article:

Hu Xia-Rong(胡夏融), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), and Li Zhao-Ji(李肇基) A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS 2012 Chin. Phys. B 21 078502

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A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS

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