Please wait a minute...
Chin. Phys. B, 2022, Vol. 31(2): 028505    DOI: 10.1088/1674-1056/ac0e26

Impact of STI indium implantation on reliability of gate oxide

Xiao-Liang Chen(陈晓亮)1,2,†, Tian Chen(陈天)2, Wei-Feng Sun(孙伟锋)1, Zhong-Jian Qian(钱忠健)2, Yu-Dai Li(李玉岱)2, and Xing-Cheng Jin(金兴成)2
1 National ASIC System Engineering Research Center, School of Electronic Science & Engineering, Southeast University, Nanjing 210096, China;
2 China Resources Microelectronics Co., Ltd, China
Abstract  The impacts of shallow trench isolation (STI) indium implantation on gate oxide and device characteristics are studied in this work. The stress modulation effect is confirmed in this research work. An enhanced gate oxide oxidation rate is observed due to the enhanced tensile stress, and the thickness gap is around 5%. Wafers with and without STI indium implantation are manufactured using the 150-nm silicon on insulator (SOI) process. The ramped voltage stress and time to breakdown capability of the gate oxide are researched. No early failure is observed for both wafers the first time the voltage is ramped up. However, a time dependent dielectric breakdown (TDDB) test shows more obvious evidence that the gate oxide quality is weakened by the STI indium implantation. Meanwhile, the device characteristics are compared, and the difference between two devices is consistent with the equivalent oxide thickness (EOT) gap.
Keywords:  silicon-on-insulator      shallow trench isolation (STI) implantation      gate oxide reliability  
Received:  20 May 2021      Revised:  18 June 2021      Accepted manuscript online:  24 June 2021
PACS:  85.30.Tv (Field effect devices)  
  61.80.Ed (γ-ray effects)  
  85.40.Ry (Impurity doping, diffusion and ion implantation technology)  
Corresponding Authors:  Xiao-Liang Chen     E-mail:

Cite this article: 

Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成) Impact of STI indium implantation on reliability of gate oxide 2022 Chin. Phys. B 31 028505

[1] Pelloie J L 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, October 28, 2003, Toulouse, France, pp. 151-155
[2] Dai L H, Bi D W, Hu Z Y, Liu X N, Zhang M Y, Zhang Z X and Zou S C 2018 Chin. Phys. B 27 048503
[3] Fan S, Hu Z Y, Zhang Z X, Ning B X, Bi D W, Dai L H, Zhang M Y and Zhang L Q 2017 Chin. Phys. B 26 036103
[4] Colinge J P 2004 Silicon-on-insulator technology:materials to VLSI, 3rd edn. (New York:Springer) pp. 309-312
[5] Peng C, Hu Z Y, En Y F, Chen Y Q, Lei Z F, Zhang Z G, Zhang Z G and Li B 2018 IEEE Trans. Nucl. Sci. 65 877
[6] Zebrev G I and Gorbunov M S 2009 IEEE Trans. Nucl. Sci. 56 2230
[7] Xi S X, Zheng Q W, Lu W, Cui J W, Wei Y and Guo Q 2020 Microelectronics Journal 102 104829
[8] Ning B X, Zhang Z X, Liu Z L, Hu Z Y, Chen M, Bi D W and Zou S C 2012 Microelectronics Reliability 52 130
[9] Li D M, Wang Z H, Huangpu L Y and Gou Q J 2007 Chin. Phys. B 16 3760
[10] Chatzikyriakou E, Morgan K and Kees de Groot C H 2018 IEEE Transactions on Electron Devices 65 808
[11] Lee W T and Elgin Q 2012 U.S. Patent 7 592 270 (2012-2-21)
[12] Ortolland C, Morin P, Chaton C, Mastromatteo E, Populaire C, Orain S, Leverd F, Stolk P, Boeuf F and Arnaud F C 2006 Symposium on VLSI Technology, June 13-15, 2006, Honolulu, USA, pp. 78-79
[13] Doremus R H and Szewczyk A 1987 Journal of Materials Science 22 2887
[14] Doremus R H 1976 Journal of Physical Chemistry 80 1773
[15] Mott N F 1983 Proceedings of the Fifth International Symposium on Passivity, May 30-June 3, 1983, Bombannes, France, pp. 1-9
[16] Irene E A 1982 Journal of the Electrochemical Society 129 413
[17] Randriamihaja Y M, Huard V, Zaka A, Haendler S, Federspiel X, Rafik M, Rideau D, Roy D and Bravaix A 2011 International Reliability Physics Symposium, April 10-14, 2011, Monterey, USA, pp. GD.3.1-GD.3.4
[18] Kaczer B, Franco J and Weckx P 2018 Microelectronics Reliability 81 186
[19] Zhang W D, Zhang J F, Zhao C Z, Chang M H, Groeseneken G and Degraeve R 2006 IEEE Electron Device Lett. 27 393
[20] Xu M and Tan C 2009 IEEE Electron Device Lett. 30 410
[21] Gupta A, Peng F, Song M, Lin M R, Wollesen D, Chen K and Hu C 1997 IEEE Electron Device Lett. 18 580
[1] Effects of buried oxide layer on working speed of SiGe heterojunction photo-transistor
Xian-Cheng Liu(刘先程), Jia-Jun Ma(马佳俊), Hong-Yun Xie(谢红云), Pei Ma(马佩), Liang Chen(陈亮), Min Guo(郭敏), Wan-Rong Zhang(张万荣). Chin. Phys. B, 2020, 29(2): 028501.
[2] Research on the radiation hardened SOI devices with single-step Si ion implantation
Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Chin. Phys. B, 2018, 27(4): 048503.
[3] Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench isolation
Meng-Ying Zhang(张梦映), Zhi-Yuan Hu(胡志远), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Zheng-Xuan Zhang(张正选). Chin. Phys. B, 2018, 27(2): 028501.
[4] Influence of characteristics' measurement sequence on total ionizing dose effect in PDSOI nMOSFET
Xin Xie(解鑫), Da-Wei Bi(毕大伟), Zhi-Yuan Hu(胡志远), Hui-Long Zhu(朱慧龙), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌). Chin. Phys. B, 2018, 27(12): 128501.
[5] Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展). Chin. Phys. B, 2017, 26(9): 096103.
[6] Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs
Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情). Chin. Phys. B, 2017, 26(3): 036103.
[7] A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
Wei Li(李威), Zhi Zheng(郑直), Zhigang Wang(汪志刚), Ping Li(李平), Xiaojun Fu(付晓君), Zhengrong He(何峥嵘), Fan Liu(刘凡), Feng Yang(杨丰), Fan Xiang(向凡), Luncai Liu(刘伦才). Chin. Phys. B, 2017, 26(1): 017701.
[8] Effect of cryogenic temperature characteristics on 0.18-μm silicon-on-insulator devices
Bingqing Xie(解冰清), Bo Li(李博), Jinshun Bi(毕津顺), Jianhui Bu(卜建辉), Chi Wu(吴驰), Binhong Li(李彬鸿), Zhengsheng Han(韩郑生), Jiajun Luo(罗家俊). Chin. Phys. B, 2016, 25(7): 078501.
[9] Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology
Pengcheng Huang(黄鹏程), Shuming Chen(陈书明), Jianjun Chen(陈建军). Chin. Phys. B, 2016, 25(3): 036103.
[10] Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance
Yu-Ru Wang(王裕如), Yi-He Liu(刘祎鹤), Zhao-Jiang Lin(林兆江), Dong Fang(方冬), Cheng-Zhou Li(李成州), Ming Qiao(乔明), Bo Zhang(张波). Chin. Phys. B, 2016, 25(2): 027305.
[11] Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures
Kai Lu(吕凯), Jing Chen(陈静), Yuping Huang(黄瑜萍), Jun Liu(刘军), Jiexin Luo(罗杰馨), Xi Wang(王曦). Chin. Phys. B, 2016, 25(11): 118503.
[12] Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs
Lü Kai (吕凯), Chen Jing (陈静), Luo Jie-Xin (罗杰馨), He Wei-Wei (何伟伟), Huang Jian-Qiang (黄建强), Chai Zhan (柴展), Wang Xi (王曦). Chin. Phys. B, 2015, 24(8): 088501.
[13] Strain analysis of free-standing strained silicon-on-insulator nanomembrane
Sun Gao-Di (孙高迪), Dong Lin-Xi (董林玺), Xue Zhong-Ying (薛忠营), Chen Da (陈达), Guo Qing-Lei (郭庆磊), Mu Zhi-Qiang (母志强). Chin. Phys. B, 2015, 24(3): 036801.
[14] Microwave photonic filter with a continuously tunable central frequency using an SOI high-Q microdisk resonator
Liu Li (刘力), Yang Ting (杨婷), Dong Jian-Ji (董建绩). Chin. Phys. B, 2014, 23(9): 093201.
[15] Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer
Hu Sheng-Dong (胡盛东), Wu Xing-He (武星河), Zhu Zhi (朱志), Jin Jing-Jing (金晶晶), Chen Yin-Hui (陈银晖). Chin. Phys. B, 2014, 23(6): 067101.
No Suggested Reading articles found!