Impact of STI indium implantation on reliability of gate oxide

doi:10.1088/1674-1056/ac0e26

Abstract The impacts of shallow trench isolation (STI) indium implantation on gate oxide and device characteristics are studied in this work. The stress modulation effect is confirmed in this research work. An enhanced gate oxide oxidation rate is observed due to the enhanced tensile stress, and the thickness gap is around 5%. Wafers with and without STI indium implantation are manufactured using the 150-nm silicon on insulator (SOI) process. The ramped voltage stress and time to breakdown capability of the gate oxide are researched. No early failure is observed for both wafers the first time the voltage is ramped up. However, a time dependent dielectric breakdown (TDDB) test shows more obvious evidence that the gate oxide quality is weakened by the STI indium implantation. Meanwhile, the device characteristics are compared, and the difference between two devices is consistent with the equivalent oxide thickness (EOT) gap.

Keywords: silicon-on-insulator shallow trench isolation (STI) implantation gate oxide reliability

Received: 20 May 2021
Revised: 18 June 2021
Accepted manuscript online: 24 June 2021

PACS:	85.30.Tv	(Field effect devices)
	61.80.Ed	(γ-ray effects)
	85.40.Ry	(Impurity doping, diffusion and ion implantation technology)

Corresponding Authors: Xiao-Liang Chen
E-mail: chenxiaoliang2@crmicro.com

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Xiao-Liang Chen(陈晓亮), Tian Chen(陈天), Wei-Feng Sun(孙伟锋), Zhong-Jian Qian(钱忠健), Yu-Dai Li(李玉岱), and Xing-Cheng Jin(金兴成) Impact of STI indium implantation on reliability of gate oxide 2022 Chin. Phys. B 31 028505

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