Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H–SiC substrates

doi:10.1088/1674-1056/21/3/038102

Abstract In this paper, the epitaxial graphene layers grown on Si- and C-face 6H-SiC substrates are investigated under a low pressure of 400 Pa at 1600 ℃. By using atomic force microscopy and Raman spectroscopy, we find that there are distinct differences in the formation and the properties between the epitaxial graphene layers grown on the Si-face and the C-face substrates, including the hydrogen etching process, the stacking type, and the number of layers. Hopefully, our results will be useful for improving the quality of the epitaxial graphene on SiC substrate.

Keywords: SiC substrate epitaxial graphene Raman spectroscopy

Received: 15 July 2011
Revised: 30 August 2011
Accepted manuscript online:

PACS:	81.05.ue	(Graphene)
	78.30.-j	(Infrared and Raman spectra)
	61.48.Gh	(Structure of graphene)

Fund: Project supported by the Key Research Foundation from the Ministry of Education of China (Grant No. JY10000925016).

Corresponding Authors: Wang Dang-Chao,wangdangchao@yahoo.com.cn
E-mail: wangdangchao@yahoo.com.cn

Cite this article:

Wang Dang-Chao(王党朝), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Lei Tian-Min(雷天民), Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Tang Xiao-Yan(汤晓燕), and Wang Hang(王航) Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H–SiC substrates 2012 Chin. Phys. B 21 038102

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Comparison of the formation process and properties of epitaxial graphenes on Si- and C-face 6H–SiC substrates

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