INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Prev
Next
|
|
|
Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy |
Du Yan-Hao(杜彦浩)a), Wu Jie-Jun(吴洁君)a)†, Luo Wei-Ke(罗伟科)a), John Goldsmithb), Han Tong(韩彤)a), Tao Yue-Bin(陶岳彬)a), Yang Zhi-Jian(杨志坚) a),Yu Tong-Jun(于彤军)a)‡, and Zhang Guo-Yi(张国义)a) |
a Research Centre for Wide-gap Semiconductors, School of Physics, Peking University, Beijing 100871, China; b Beijing Yanyuan Research Centre, Sino Nitride Semiconductor LTD, Beijing 100871, China |
|
|
Abstract Two strain-state samples of GaN, labelled the strain-relief sample and the quality-improved sample, were grown by hydride vapour phase epitaxy (HVPE), and then characterized by high-resolution X-ray diffraction, photoluminescence and optical microscopy. Two strain states of GaN in HVPE, like 3D and 2D growth modes in metal-organic chemical vapour deposition (MOCVD), provide an effective way to solve the heteroepitaxial problems of both strain relief and quality improvement. The gradual variation method (GVM), developed based on the two strain states, is characterized by growth parameters' gradual variation alternating between the strain-relief growth conditions and the quality-improved growth conditions. In GVM, the introduction of the strain-relief amplitude, which is defined by the range from the quality-improved growth conditions to the strain-relief growth conditions, makes the strain-relief control concise and effective. The 300-μm thick bright and crack-free GaN film grown on a two-inch sapphire proves the effectiveness of GVM.
|
Received: 15 March 2011
Revised: 11 May 2011
Accepted manuscript online:
|
PACS:
|
81.05.Ea
|
(III-V semiconductors)
|
|
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
|
81.15.Kk
|
(Vapor phase epitaxy; growth from vapor phase)
|
|
81.15.-z
|
(Methods of deposition of films and coatings; film growth and epitaxy)
|
|
Cite this article:
Du Yan-Hao(杜彦浩), Wu Jie-Jun(吴洁君), Luo Wei-Ke(罗伟科), John Goldsmith, Han Tong(韩彤), Tao Yue-Bin(陶岳彬), Yang Zhi-Jian(杨志坚), Yu Tong-Jun(于彤军), and Zhang Guo-Yi(张国义) Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy 2011 Chin. Phys. B 20 098101
|
[1] |
Nakamura S 1991 Jpn. J. Appl. Phys. Part 2 30 L1705
|
[2] |
Chen Z, Newman S, Brown D, Chung R, Keller S, Mishra U K, Denbaars S P and Nakamura S 2008 Appl. Phys. Lett. 93 191906
|
[3] |
Fujito K, Kubo S, Nagaoka H, Mochizuki T, Namita H and Nagao S 2009 J. Crystal Growth 311 3011
|
[4] |
Dam C E C, Grzegorczyk A P, Hageman P R and Larsen P K 2006 J. Crystal Growth 290 473
|
[5] |
Huang H H, Chao C L, Chi T W, Chang Y L, Liu P C, Tu L W, Tsay J D, Kuo H C, Cheng S J and Lee W I 2009 J. Crystal Growth 311 3029
|
[6] |
Darakchieva V, Monemar B, Usui A, Saenger M and Schubert M 2008 J. Crystal Growth 310 959
|
[7] |
Polian A, Grimsditch M and Grzegory I 1996 J. Appl. Phys. 79 3343
|
[8] |
Funato K, Hashimoto S, Yanashima K, Nakamura F and Ikeda M 1999 Appl. Phys. Lett. 75 1137
|
[9] |
Lee S N, Son J K, Paek H S, Sakong T, Lee W, Kim K H, Kim S S, Lee Y J, Noh D Y, Yoon E, Nam O H and Park Y 2004 Phys. Stat. Sol. (c) 1 2458
|
[10] |
Tyagi A, Wu F, Young E C, Chakraborty A, Ohta H, Bhat R, Fujito K, DenBaars S P, Nakamura S and Speck J S 2009 Appl. Phys. Lett. bf 95 251905
|
[11] |
Song T L, Chua S J, Fitzgerald E A, Chen P and Tripathy S 2003 Appl. Phys. Lett. 83 1545
|
[12] |
Wu J, Han X, Li J, Li D, Lu Y, Wei H, Cong G, Liu X, Zhu Q and Wang Z 2005 J. Crystal Growth 279 335
|
[13] |
Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager III J W, Jones E, Liliental-Weber Z, Rubin M and Weber E R 1996 Phys. Rev. B 54 17745
|
[14] |
Lee K J, Shin E H, Shim S K, Kim T K, Yang G M and Lim K Y 2005 Phys. Stat. Sol. (c) 2 2104
|
No Suggested Reading articles found! |
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
Cited |
|
|
|
|
Altmetric
|
blogs
Facebook pages
Wikipedia page
Google+ users
|
Online attention
Altmetric calculates a score based on the online attention an article receives. Each coloured thread in the circle represents a different type of online attention. The number in the centre is the Altmetric score. Social media and mainstream news media are the main sources that calculate the score. Reference managers such as Mendeley are also tracked but do not contribute to the score. Older articles often score higher because they have had more time to get noticed. To account for this, Altmetric has included the context data for other articles of a similar age.
View more on Altmetrics
|
|
|