CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES |
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$\gamma$ radiation caused graphene defects and increased carrier density |
Han Mai-Xing(韩买兴), Ji Zhuo-Yu(姬濯宇), Shang Li-Wei(商立伟), Chen Ying-Ping(陈映平), Wang Hong(王宏), Liu Xin(刘欣), Li Dong-Mei(李冬梅), and Liu Ming(刘明)† |
Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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Abstract We report on a micro-Raman investigation of inducing defects in mono-layer, bi-layer and tri-layer graphene by $\gamma$ ray radiation. It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D' bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.
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Received: 16 March 2011
Revised: 07 April 2011
Accepted manuscript online:
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PACS:
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61.48.Gh
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(Structure of graphene)
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68.65.Pq
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(Graphene films)
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72.80.Vp
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(Electronic transport in graphene)
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73.22.Pr
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(Electronic structure of graphene)
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Fund: Project partially supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703)
and the National Natural Science Foundation of China (Grant Nos. 60825403, 90607022, and 61001043). |
Cite this article:
Han Mai-Xing(韩买兴), Ji Zhuo-Yu(姬濯宇), Shang Li-Wei(商立伟), Chen Ying-Ping(陈映平), Wang Hong(王宏), Liu Xin(刘欣), Li Dong-Mei(李冬梅), and Liu Ming(刘明) $\gamma$ radiation caused graphene defects and increased carrier density 2011 Chin. Phys. B 20 086102
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