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Study of the lateral distribution of neodymium ions implanted in silicon |
Qin Xi-Feng(秦希峰)a)†, Li Hong-Zhen(李洪珍)b), Li Shuang(李双)a), Liang Yi(梁毅) a), Wang Feng-Xiang(王凤翔)a), Fu Gang(付刚)a), and Ji Yan-Ju(季艳菊) a) |
a College of Science, Shandong Jianzhu University, Jinan 250101, China; b College of Physics and Engineering, Qufu Normal University, Qufu 273165, China |
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Abstract Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5 × 1015 ions/cm2 are implanted into Si single crystals at room temperature under the angles of 0°, 30°, and 45°, respectively. The lateral spreads of 200 keV—500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.
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Received: 08 December 2010
Revised: 26 January 2011
Accepted manuscript online:
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PACS:
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61.72.sh
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(Impurity distribution)
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61.72.up
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(Other materials)
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82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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85.40.Ry
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(Impurity doping, diffusion and ion implantation technology)
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Fund: Project supported by the Shandong Jianzhu University Foundation, China (Grant No. XN070109) and the National Natural
Science Foundation of China (Grant No. 51042002). |
Cite this article:
Qin Xi-Feng(秦希峰), Li Hong-Zhen(李洪珍), Li Shuang(李双), Liang Yi(梁毅), Wang Feng-Xiang(王凤翔), Fu Gang(付刚), and Ji Yan-Ju(季艳菊) Study of the lateral distribution of neodymium ions implanted in silicon 2011 Chin. Phys. B 20 086103
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