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Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor |
Quan Si(全思)†, Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) |
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China |
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Abstract AlGaN/GaN depletion-mode high-electron-mobility transistor (D-HEMT) and fluorine (F) plasma treated enhancement-mode high-electron-mobility transistor (E-HEMT) are exposed to 60Co gamma radiation with a dose of 1.6 Mrad (Si). No degradation is observed in the performance of D-HEMT. However, the maximum transconductance of E-HEMT is increased after radiation. The 2DEG density and the mobility are calculated from the results of capacitance–voltage measurement. The electron mobility decreases after fluorine plasma treatment and recovers after radiation. Conductance measurements in a frequency range from 10 kHz to 1 MHz are used to characterize the trapping effects in the devices. A new type of trap is observed in the F plasma treated E-HEMT compared with the D-HEMT, but the density of the trap decreases by radiation. Fitting of Gp/ω data yields the trap densities DT= (1 - 3) × 1012 cm-2· eV-1 and DT= (0.2-0.8) × 1012 cm-2·eV-1 before and after radiation, respectively. The time constant is 0.5 ms-6 ms. With F plasma treatment, the trap is introduced by etch damage and degrades the electronic mobility. After 60Co gamma radiation, the etch damage decreases and the electron mobility is improved. The gamma radiation can recover the etch damage caused by F plasma treatment.
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Received: 09 November 2010
Revised: 06 December 2010
Accepted manuscript online:
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PACS:
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.50.-n
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(Dielectric, ferroelectric, and piezoelectric devices)
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Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60736033) and the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009). |
Cite this article:
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游) Influence of 60Co gamma radiation on fluorine plasma treated enhancement-mode high- electron-mobility transistor 2011 Chin. Phys. B 20 058501
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[1] |
Cai Y, Cheng Z, Yang Z, Tang W C W, Lau K M and Chen K J 2007 IEEE Electron Device Lett. 28 328
|
[2] |
Cai Y, Zhou Y, Lau K M and Chen K J 2006 IEEE Trans. Electron Devices 53 2207
|
[3] |
Feng Q, Gu W P, Hao Y, Ma X H, Wang C and Zhang J C 2009 Acta Phys. Sin. 58 511 (in Chinese)
|
[4] |
Huang S, Lin F, Liu F, Ma N, Shen B, Wang P, Wang T, Xu F J and Yao J Q 2009 Acta Phys. Sin. 58 1614 (in Chinese)
|
[5] |
Duan H T, F Q, Gu W P, Hao Y, Ma X H, Ni J Y and Zhang J C 2009 Acta Phys. Sin. 58 1601 (in Chinese)
|
[6] |
Cai Y, Zhou Y, Chen K J and Lau K M 2005 IEEE Electron Device Lett. 26 435
|
[7] |
Cai Y, Zhou Y, Lau K M and Chen K J 2006 IEEE Trans. Electron Devices 53 2207
|
[8] |
Cai Y, Cheng Z Q, Tang W C W, Lau K M and Chen K J 2006 IEEE Trans. Electron Devices 53 2223
|
[9] |
Palacios T, Suh C S, Chakraborty A, Keller S, DenBaars S P and Mishra U K 2006 IEEE Electron Device Lett. 27 428
|
[10] |
Yi C, Wang R and Huang W, Tang W C W, Lau K M and Chen K J 2007 IEDM 389
|
[11] |
Wang R N, Cai Y and Chen K J 2009 Solid-State Electronics 53 1
|
[12] |
Feng Q, Gu W P, Hao Y, Ma X H, Wang C and Zhang J C 2009 Acta Phys. Sin. 58 1161 (in Chinese)
|
[13] |
Membreno G A U, Dell J M, Parish G, Nener B D, Faraone L, Keller S and Mishra U K 2007 J. Appl. Phys. 101 054511
|
[14] |
Wang C, Quan S, Zhang J F, Hao Y, Feng Q and Chen J F 2009 Acta Phys. Sin. 58 1966 (in Chinese)
|
[15] |
Stoklas R, Gregusova D, Novak J, Vescan A and Kordos P 2008 Appl. Phys. Lett. 93 124103
|
[16] |
Shen L, Palacios T, Poblenz C, Corrion A, Chakraborty A, Fichtenbaum N, Keller S, Denbaars S P, Speck J S and Mishra U K 2006 IEEE Electron Device Lett. 27 214
|
[17] |
Chu R M, Shen L K, Fichtenbaum N, Brown D, Keller S and Mishra K U 2008 IEEE Electron Device Lett. 29 207 endfootnotesize
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