Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

doi:10.1088/1674-1056/20/5/058104

Abstract A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond (NCD) films produced by only adding 0.24% N₂ into 4% CH₄/H₂ plasma, as compared to the high quality transparent microcrystalline diamond (MCD) films, grown using the same growth parameters except for nitrogen. These experimental results clearly evidence that defect formation and impurity incorporation (for example, N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CH_x (x=1,2,3) growth species for adsorption sites.

Keywords: thick nanocrystalline diamond films nitrogen doping crystalline quality

Received: 22 November 2010
Revised: 27 December 2010
Accepted manuscript online:

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	81.05.ug	(Diamond)
	81.07.-b	(Nanoscale materials and structures: fabrication and characterization)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10874021) and Natural Science Foundation of Educational Department of Jiangsu Province of China (Grant No. 06kja43014).

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Gu Li-Ping (顾利萍), Tang Chun-Jiu (唐春玖), Jiang Xue-Fan (江学范), J. L. Pinto Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films 2011 Chin. Phys. B 20 058104

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Impact of nitrogen doping on growth and hydrogen impurity incorporation of thick nanocrystalline diamond films

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