Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition

doi:10.1088/1674-1056/20/12/128101

Abstract In this paper, we report a feasible route of growing epitaxial graphene on 4H-SiC (0001) substrate in a low pressure of 4 mbar (1 bar=10⁵ Pa) with an argon flux of 2 standard liters per minute at 1200, 1300, 1400, and 1500 ℃ in a commercial chemical vapour deposition SiC reactor. Using Raman spectroscopy and scanning electron microscopy, we confirm that epitaxial graphene evidently forms on SiC surface above 1300 ℃ with a size of several microns. By fitting the 2D band of Raman data with two-Lorentzian function, and comparing with the published reports, we conclude that epitaxial graphene grown at 1300 ℃ is four-layer graphene.

Keywords: SiC substrate epitaxial graphene Raman spectroscopy

Received: 08 May 2011
Revised: 19 July 2011
Accepted manuscript online:

PACS:	81.05.ue	(Graphene)
	78.30.-j	(Infrared and Raman spectra)
	61.48.Gh	(Structure of graphene)

Fund: Project supported by the Key Research Foundation of the Ministry of Education of China (Grant No. JY10000925016).

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Wang Dang-Chao(王党朝), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Lei Tian-Min(雷天民), Guo Hui(郭辉), Wang Yue-Hu(王悦湖), Tang Xiao-Yan(汤晓燕), and Wang Hang(王航) Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition 2011 Chin. Phys. B 20 128101

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Raman analysis of epitaxial graphene grown on 4H–SiC (0001) substrate under low pressure condition

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