Comparative study of different properties of GaN films grown on(0001) sapphire using high and low temperature AlN interlayers

doi:10.1088/1674-1056/19/5/057203

Abstract Comparative study of high and low temperature AlN interlayers and their roles in the properties of GaN epilayers prepared by means of metal organic chemical vapour deposition on (0001) plane sapphire substrates is carried out by high resolution x-ray diffraction, photoluminescence and Raman spectroscopy. It is found that the crystalline quality of GaN epilayers is improved significantly by using the high temperature AlN interlayers, which prevent the threading dislocations from extending, especially for the edge type dislocation. The analysis results based on photoluminescence and Raman measurements demonstrate that there exist more compressive stress in GaN epilayers with high temperature AlN interlayers. The band edge emission energy increases from 3.423 eV to 3.438 eV and the frequency of Raman shift of $E_{2 }$(TO) moves from 571.3 cm$^{ - 1}$ to 572.9 cm$^{ - 1}$ when the temperature of AlN interlayers increases from 700 $^{\circ}$C to 1050 $^{\circ}$C. It is believed that the temperature of AlN interlayers effectively determines the size, the density and the coalescence rate of the islands, and the high temperature AlN interlayers provide large size and low density islands for GaN epilayer growth and the threading dislocations are bent and interactive easily. Due to the threading dislocation reduction in GaN epilayers with high temperature AlN interlayers, the approaches of strain relaxation reduce drastically, and thus the compressive stress in GaN epilayers with high temperature AlN interlayers is high compared with that in GaN epilayers with low temperature AlN interlayers.

Keywords: GaN AlN interlayers high temperature

Received: 18 September 2009
Revised: 04 November 2009
Accepted manuscript online:

PACS:	68.55.A-	(Nucleation and growth)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	78.55.Cr	(III-V semiconductors)
	61.05.cp	(X-ray diffraction)
	78.30.Fs	(III-V and II-VI semiconductors)
	68.60.Bs	(Mechanical and acoustical properties)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos.~60736033 and 60676048).

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Xue Jun-Shuai(薛军帅), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), and Ni Jin-Yu(倪金玉) Comparative study of different properties of GaN films grown on(0001) sapphire using high and low temperature AlN interlayers 2010 Chin. Phys. B 19 057203

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Comparative study of different properties of GaN films grown on(0001) sapphire using high and low temperature AlN interlayers

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