Disorder-induced enhancement of conductance in doped nanowires

doi:10.1088/1674-1056/19/11/117201

Abstract A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires. The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

Keywords: conductance nanowires

Received: 01 May 2010
Revised: 24 June 2010
Accepted manuscript online:

PACS:	61.72.up	(Other materials)
	73.40.Ns	(Metal-nonmetal contacts)
	73.63.-b	(Electronic transport in nanoscale materials and structures)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10874052), Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 200726).

Cite this article:

Xu Ning(徐宁),Wang Bao-Lin(王保林), Sun Hou-Qian(孙厚谦), and Kong Fan-Jie(孔凡杰) Disorder-induced enhancement of conductance in doped nanowires 2010 Chin. Phys. B 19 117201

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