Fabrication of high-quality three-dimensional photonic crystal heterostructures
Liu Zheng-Qi(刘正奇), Feng Tian-Hua(冯天华), Dai Qiao-Feng(戴峭峰), Wu Li-Jun(吴立军), and Lan Sheng(兰胜)†
Laboratory of Photonic Information Technology, School for Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China
Abstract Three-dimensional photonic crystal (PC) heterostructures with high quality are fabricated by using a pressure controlled isothermal heating vertical deposition technique. The formed heterostructures have higher quality, such as deeper band gaps and sharper band edges, than the heterostructures reported so far. Such a significant improvement in quality is due to the introduction of a thin TiO2 buffer layer between the two constitutional PCs. It is revealed that the disorder caused by lattice mismatch is successfully removed if the buffer layer is used once. As a result, the formed heterostructures possess the main features in the band gap of constitutional PCs. The crucial role of the thin buffer layer is also verified by numerical simulations based on the finite-difference time-domain technique.
Received: 24 October 2008
Revised: 20 November 2008
Accepted manuscript online:
PACS:
81.15.-z
(Methods of deposition of films and coatings; film growth and epitaxy)
(Specific materials: fabrication, treatment, testing, and analysis)
Fund: Project supported by the National
Natural Science Foundation of China (Grant No 10674051), the Program
for Innovative Research Team of the Higher Education of Guangdong
Province, China (Grant No 06CXTD005), and the Key Program of
Extracurricular Research in South
China Normal University (SCNU), China (Grant No 08GDKC02).
Cite this article:
Liu Zheng-Qi(刘正奇), Feng Tian-Hua(冯天华), Dai Qiao-Feng(戴峭峰), Wu Li-Jun(吴立军), and Lan Sheng(兰胜) Fabrication of high-quality three-dimensional photonic crystal heterostructures 2009 Chin. Phys. B 18 2383
Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate S Lu(卢帅), K Peng(彭坤), P D Wang(王鹏栋), A X Chen(陈爱喜), W Ren(任伟), X W Fang(方鑫伟), Y Wu(伍莹), Z Y Li(李治云), H F Li(李慧芳), F Y Cheng(程飞宇), K L Xiong(熊康林), J Y Yang(杨继勇), J Z Wang(王俊忠), S A Ding(丁孙安), Y P Jiang(蒋烨平), L Wang(王利), Q Li(李青), F S Li(李坊森), and L F Chi(迟力峰). Chin. Phys. B, 2021, 30(12): 126804.
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