Please wait a minute...
Chin. Phys. B, 2022, Vol. 31(10): 107305    DOI: 10.1088/1674-1056/ac67ca
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Epitaxial Bi2Sr2CuOy thin films as p-type transparent conductors

Chen Zhou(周臣)1,2, Wang-Ping Cheng(程王平)1,2, Yuan-Di He(何媛娣)1,2, Cheng Shao(邵成)1, Ling Hu(胡令)1, Ren-Huai Wei(魏仁怀)1,†, Jing-Gang Qin(秦经刚)3,‡, Wen-Hai Song(宋文海)1,§, Xue-Bin Zhu(朱雪斌)1, Chuan-Bing Cai(蔡传兵)4, and Yu-Ping Sun(孙玉平)1,5,6
1. Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
2. University of Science and Technology of China, Hefei 230026, China;
3. Institute of Plasma Physics, Chinese Academy of Sciences, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
4. Physics Department, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University, Shanghai 200444, China;
5. High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, China;
6. Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Abstract  Development of p-type transparent conducting thin films is tireless due to the trade-off issue between optical transparency and conductivity. The rarely concerned low normal state resistance makes Bi-based superconducting cuprates the potential hole-type transparent conductors, which have been realized in Bi2Sr2CaCu2Oy thin films. In this study, epitaxial superconducting Bi2Sr2CuOy and Bi2Sr1.8Nd0.2CuOy thin films with superior normal state conductivity are proposed as p-type transparent conductors. It is found that the Bi2Sr1.8Nd0.2CuOy thin film with thickness 15 nm shows an average visible transmittance of 65% and room-temperature sheet resistance of 650 Ω/sq. The results further demonstrate that Bi-based cuprate superconductors can be regarded as potential p-type transparent conductors for future optoelectronic applications.
Keywords:  p-type      transparent conductor      sol-gel      Bi-2201  
Received:  16 March 2022      Revised:  11 April 2022      Accepted manuscript online: 
PACS:  73.61.-r (Electrical properties of specific thin films)  
  78.20.-e (Optical properties of bulk materials and thin films)  
  81.20.Fw (Sol-gel processing, precipitation)  
  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11604337).
Corresponding Authors:  Ren-Huai Wei, Jing-Gang Qin, Xue-Bin Zhu     E-mail:  rhwei@issp.ac.cn;qinjg@ipp.ac.cn;xbzhu@issp.ac.cn

Cite this article: 

Chen Zhou(周臣), Wang-Ping Cheng(程王平), Yuan-Di He(何媛娣), Cheng Shao(邵成), Ling Hu(胡令), Ren-Huai Wei(魏仁怀), Jing-Gang Qin(秦经刚), Wen-Hai Song(宋文海), Xue-Bin Zhu(朱雪斌), Chuan-Bing Cai(蔡传兵), and Yu-Ping Sun(孙玉平) Epitaxial Bi2Sr2CuOy thin films as p-type transparent conductors 2022 Chin. Phys. B 31 107305

[1] Wang Z, Nayak P K, Caraveo-Frescas J A and Alshareef H N 2016 Adv. Mater. 28 3831
[2] Beyer W, Hupkes J and Stiebig H 2007 Thin Solid Films 516 147
[3] Ohta H and Hosono H 2004 Mater. Today 7 42
[4] Banerjee A and Chattopadhyay K 2005 Prog. Cryst. Growth Charact. Mater. 50 52
[5] Kawazoe H, Yanagi H, Ueda K and Hosono H 2000 MRS Bull. 25 28
[6] Kawazoe H, Yasukawa M, Hyodo H, Kurita M, Yanagi H and Hosono H 1997 Nature 389 939
[7] Nagarajan R, Draeseke A D, Sleight A W and Tate J 2001 J. Appl. Phys. 89 8022
[8] Jayaraj M K, Draeseke A D, Tate J and Sleight A W 2001 Thin Solid Films 397 244
[9] Ueda K, Hase T, Yanagi H, Kawazoe H, Hosono H, Ohta H, Orita M and Hirano M 2001 J. Appl. Phys. 89 1790
[10] Duan N and Sleight A W 2000 Appl. Phys. Lett. 77 1325
[11] Snure M and Tiwari A 2007 Appl. Phys. Lett. 91 092123
[12] Yanagi H, Hase T, Ibuki S, Ueda K and Hosono H 2001 Appl. Phys. Lett. 78 1583
[13] Freeman A J, Poeppelmeier K R, Mason T O, Chang R P H and Marks T J 2000 MRS Bull. 25 45
[14] Zhang X, Zhang L, Perkins J D and Zunger A 2015 Phys. Rev. Lett. 115 176602
[15] Zhang L, Zhou Y, Guo L, Zhao W, Barnes A, Zhang H T, Eaton C, Zheng Y, Brahlek M, Haneef H F, Podraza N J, Chan M H W, Gopalan V, Rabe K M and Engel-Herbert R 2016 Nat. Mater. 15 204
[16] Ha Y and Lee S 2020 Adv. Funct. Mater. 30 2001489
[17] Stoner J L, Murgatroyd P A E, O'Sullivan M, Dyer M S, Man-ning T D, Claridge J B, Rosseinsky M J and Alaria J 2019 Adv. Funct. Mater. 29 1808609
[18] Wells M P, Zou B, Doiron B G, Kilmurray R, Mihai A P, Oulton R F M, Gubeljak P, Ormandy K L, Mallia G, Harrison N M, Cohen L F, Maier S A, Alford N M N and Petrov P K 2017 Adv. Opt. Mater. 5 1700622
[19] Park Y, Roth J, Oka D, Hirose Y, Hasegawa T, Paul A, Pogreb-nyakov A, Gopalan V, Birol T and Engel-Herbert R 2020 Commun. Phys. 3 102
[20] Asmara T C, Wan D, Zhao Y, Majidi M A, Nelson C T, Scott M C, Cai Y, Yan B, Schmidt D, Yang M, Zhu T, Trevisanutto P E, Motapothula M R, Feng Y P, Breese M B H, Sherburne M, Asta M, Minor A, Venkatesan T and Rusydi A 2017 Nat. Commun. 8 15271
[21] Wan D Y, Zhao Y L, Cai Y, Asmara T C, Huang Z, Chen J Q, Hong J, Yin S M, Nelson C T, Motapothula M R, Yan B X, Xiang D, Chi X, Zheng H, Chen W, Xu R, Ariando A R, Minor A M, Breese M B H, Sherburne M, Asta M, Xu Q H and Venkatesan T 2017 Nat. Commun. 8 15070
[22] Uemura Y J, Luke G M, Sternlieb B J, Brewer J H, Carolan J F, Hardy W N, Kadono R, Kempton J R, Kieft R F, Kreitzman S R, Mulhern P, Riseman T M, LL Williams D, Yang B X, Uchida S, Takagi H, Gopalakrishnan J, Sleight A W, Subramanian M A, Chien C L, Cieplak M Z, Xiao G, Lee V Y, Statt B W, Stronach C E, Kossler W J and Yu X H 1989 Phys. Rev. Lett. 62 2317
[23] Hou X H, Li J Q, Li J W, Xiang J W, Wu F, Huang Y Z and Zhao Z X 1994 Phys. Rev. B 50 496
[24] Roesera H P, Hetfleischa F, Huberb F M, Von Schoenermarka M F, Steppera M, Moritza A and Nikoghosyanc A S 2008 Acta Astronaut. 63 1372
[25] Orlando M T D, Rouver A N, Rocha J R and Cavichini A S 2018 Phys. Lett. A 382 1486
[26] Maeda A, Hase M, Tsukada I, Noda K, Takebayashi S and Uchinokura K 1990 Phys. Rev. B 41 6418
[27] Wei R H, Zhang L, Hu L, Tang X W, Yang J, Dai J M, Song W H, Zhu X B and Sun Y P 2018 Appl. Phys. Lett. 112 251109
[28] Forró L, Lukatela J and Keszei B 1990 Solid State Commun. 73 501
[29] Chen X H, Yu M, Ruan K Q, Li S Y, Gui Z, Zhang G C and Cao L Z 1998 Phys. Rev. B 58 14219
[30] Maljuk A and Lin C T 2016 Crystals 6 62
[31] Vedeneev S I and Maude D K 2004 Phys. Rev. B 70 184524
[32] Ono S and Ando Y 2003 Phys. Rev. B 67 104512
[33] Sales B C and Chakoumakos B C 1991 Phys. Rev. B 43 12994
[34] Hu L, Zhao M L, Liang S, Song D P, Wei R H, Tang X W, Song W H, Dai J M, He G, Zhang C J, Zhu X B and Sun Y P 2019 Phys. Rev. Appl. 12 044035
[35] Zhang K H L, Du Y, Papadogianni A, Bierwagen O, Sallis S, Piper L F J, Bowden M E, Shutthanandan V, Sushko P V and Chambers S A 2015 Adv. Mater. 27 5191
[36] Wei R H, Tang X W, Hui Z Z, Luo X, Dai J M, Yang J, Song W H, Chen L, Zhu X G, Zhu X B and Sun Y P 2015 Appl. Phys. Lett. 106 101906
[1] Structural evolution-enabled BiFeO3 modulated by strontium doping with enhanced dielectric, optical and superparamagneticproperties by a modified sol-gel method
Sharon V S, Veena Gopalan E, and Malini K A. Chin. Phys. B, 2023, 32(3): 037504.
[2] Photoelectrochemical activity of ZnO:Ag/rGO photo-anodes synthesized by two-steps sol-gel method
D Ben Jemia, M Karyaoui, M A Wederni, A Bardaoui, M V Martinez-Huerta, M Amlouk, and R Chtourou. Chin. Phys. B, 2022, 31(5): 058201.
[3] Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements
Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yixiao Qian(钱怡潇), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Chin. Phys. B, 2022, 31(4): 046104.
[4] Atomic and electronic structures of p-type dopants in 4H-SiC
Lingyan Lu(卢玲燕), Han Zhang(张涵), Xiaowei Wu(吴晓维), Jing Shi(石晶), and Yi-Yang Sun(孙宜阳). Chin. Phys. B, 2021, 30(9): 096806.
[5] Grain boundary effect on structural, optical, and electrical properties of sol-gel synthesized Fe-doped SnO2 nanoparticles
Archana V, Lakshmi Mohan, Kathirvel P, and Saravanakumar S. Chin. Phys. B, 2021, 30(4): 048202.
[6] Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs
Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波). Chin. Phys. B, 2021, 30(4): 048504.
[7] Characterization, spectroscopic investigation of defects by positron annihilation, and possible application of synthesized PbO nanoparticles
Sk Irsad Ali, Anjan Das, Apoorva Agrawal, Shubharaj Mukherjee, Maudud Ahmed, P M G Nambissan, Samiran Mandal, and Atis Chandra Mandal. Chin. Phys. B, 2021, 30(2): 026103.
[8] Novel fast-switching LIGBT with P-buried layer and partial SOI
Haoran Wang(王浩然), Baoxing Duan(段宝兴), Licheng Sun(孙李诚), and Yintang Yang(杨银堂). Chin. Phys. B, 2021, 30(2): 027302.
[9] Erratum to “Indium doping effect on properties of ZnO nanoparticles synthesized by sol-gel method”
S Mourad, J El Ghoul, K Omri, K Khirouni. Chin. Phys. B, 2020, 29(3): 039901.
[10] Indium doping effect on properties of ZnO nanoparticles synthesized by sol-gel method
S Mourad, J El Ghoul, K Omri, K Khirouni. Chin. Phys. B, 2019, 28(4): 047701.
[11] Enhanced structural and magnetic properties of microwave sintered Li-Ni-Co ferrites prepared by sol-gel method
Nandeibam Nilima, M Maisnam, Sumitra Phanjoubam. Chin. Phys. B, 2019, 28(2): 026101.
[12] Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells
H Noverola-Gamas, L M Gaggero-Sager, O Oubram. Chin. Phys. B, 2019, 28(12): 124207.
[13] Lump-type solutions of a generalized Kadomtsev-Petviashvili equation in (3+1)-dimensions
Xue-Ping Cheng(程雪苹), Wen-Xiu Ma(马文秀), Yun-Qing Yang(杨云青). Chin. Phys. B, 2019, 28(10): 100203.
[14] Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer
Lin-Yuan Wang(王林媛), Wei-Dong Song(宋伟东), Wen-Xiao Hu(胡文晓), Guang Li(李光), Xing-Jun Luo(罗幸君), Hu Wang(汪虎), Jia-Kai Xiao(肖稼凯), Jia-Qi Guo(郭佳琦), Xing-Fu Wang(王幸福), Rui Hao(郝锐), Han-Xiang Yi(易翰翔), Qi-Bao Wu(吴启保), Shu-Ti Li(李述体). Chin. Phys. B, 2019, 28(1): 018503.
[15] Synthesis and thermoelectric properties of Nd-single filled p-type skutterudites
Hong Wu(吴宏), Nusrat Shaheen, Heng-Quan Yang(杨恒全), Kun-Ling Peng(彭坤岭), Xing-Chen Shen(沈星辰), Guo-Yu Wang(王国玉), Xu Lu(卢旭), Xiao-Yuan Zhou(周小元). Chin. Phys. B, 2018, 27(4): 047203.
No Suggested Reading articles found!