Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
Zhang Yang (张杨), Zeng Yi-Ping (曾一平), Ma Long (马龙), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱占平), Wang Liang-Chen (王良臣), Yang Fu-Hua (杨富华)
Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract This paper reports that InAs/In$_{0.53}$Ga$_{0.47}$As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm$^{2}$ has been obtained for diodes with AlAs barriers of ten monolayers, and an In$_{0.53}$Ga$_{0.47}$As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.
Received: 19 January 2006
Revised: 08 February 2006
Accepted manuscript online:
Zhang Yang (张杨), Zeng Yi-Ping (曾一平), Ma Long (马龙), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱占平), Wang Liang-Chen (王良臣), Yang Fu-Hua (杨富华) Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 2006 Chinese Physics 15 1335
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