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The influence of SiNx substrate on crystallinity of μc-Si film used in thin film transistors
Li Juan (李娟), Wu Chun-Ya (吴春亚), Liu Jian-Ping (刘建平), Zhao Shu-Yun (赵淑芸), Meng Zhi-Guo (孟志国), Xiong Shao-Zhen (熊绍珍), Zhang Li-Zhu (张丽珠)
Chinese Physics, 2006, 15 (6):
1330-1334.
DOI: 10.1088/1009-1963/15/6/033
This paper found that the crystalline volume ratio (Xc) of $\mu$c-Si deposited on SiNx substrate is higher than that on 7059 glass. At the same silane concentration (SC) (for example, at SC=2%), the Xc of $\mu$c-Si deposited on SiNx is more than 64%, but just 44% if deposited on Conning 7059. It considered that the `hills' on SiNx substrate would promote the crystalline growth of $\mu$c-Si thin film, which has been confirmed by atomic force microscope (AFM) observation. Comparing several thin film transistor (TFT) samples whose active-layer were deposited under various SC, this paper found that the appropriate SC for the $\mu$c-Si thin film used in TFT as active layer should be more than 2%, and Xc should be around 50%. Additionally, the stability comparison of $\mu$c-Si TFT and a-Si TFT is shown in this paper.
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