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Chinese Physics, 2006, Vol. 15(6): 1325-1329    DOI: 10.1088/1009-1963/15/6/032
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study on the spectral response of the Schottky photodetector of GaN

He Zheng (何政)ab, Kang Yong (亢勇)ab, Tang Ying-Wen (汤英文)ab, Li Xue (李雪)a, Fang Jia-Xiong (方家熊)a
a State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China; b  Graduates School of Chinese Academy of Sciences, Beijing 100039, China
Abstract  The Schottky photodetector was fabricated on GaN epilayers grown by metalorganic chemical vapour deposition (MOCVD). The spectral response of the Schottky photodetector was characterized. A new model is proposed to interpret the characteristic of the spectral response curve of the Schottky photodetectors by introducing a penetrating distance of an incident light at a certain wavelength in the current continuity equation and the interface recombination at the metal--semiconductor rectifying contact. The expressions for the spectral response of the Schottky photodetector are deduced and used successfully to fit the experimental data.
Keywords:  spectral response      Schottky photodetector      GaN  
Accepted manuscript online: 
PACS:  85.60.Gz (Photodetectors (including infrared and CCD detectors))  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  85.60.Bt (Optoelectronic device characterization, design, and modeling)  
Fund: Project supported by Science Committee and Technology Foundation of Shanghai, China (Grant No 04dg05116).

Cite this article: 

He Zheng (何政), Kang Yong (亢勇), Tang Ying-Wen (汤英文), Li Xue (李雪), Fang Jia-Xiong (方家熊) Study on the spectral response of the Schottky photodetector of GaN 2006 Chinese Physics 15 1325

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