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Chinese Physics, 2005, Vol. 14(3): 615-619    DOI: 10.1088/1009-1963/14/3/034
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Microstructure and photoluminescence of Er-doped SiOx films synthesized by ion beam assisted deposition

Duan Shu-Qing (段淑卿), Tan Na (谭娜), Zhang Qing-Yu (张庆瑜)
State Key Laboratory of Materials Modification of Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116024, China
Abstract  Er-doped SiOx films were synthesized at 500℃ by ion beam assisted deposition technique and annealed at 800 and 1100℃ for 2h in the air atmosphere. The analysis by using energy dispersive x-ray spectroscopy showed that the ratio of Si to O decreased from 3 in the as-deposited films to about 1 in the annealed films. The investigation by using transmission electron microscopy and x-ray diffraction indicated that annealing induces a microstructure change from amorphous to crystalline. The grain sizes in the films were about 10 and 40nm when annealed at 800 and 1100℃, respectively. The films annealed at temperatures of 800 and 1100℃ exhibited a sharp photoluminescence (PL) at 1.533μm from the Er centres when pumped by 980nm laser. The influence of microstructure and grain size on the PL from Er-doped SiOx films has been studied and discussed.
Keywords:  ion beam assisted deposition      Er-doped SiOx film      microstructure      photoluminescence  
Received:  08 September 2004      Revised:  11 November 2004      Accepted manuscript online: 
PACS:  68.55.-a (Thin film structure and morphology)  
  78.55.Hx (Other solid inorganic materials)  
  81.15.Jj (Ion and electron beam-assisted deposition; ion plating)  
  81.40.Gh (Other heat and thermomechanical treatments)  
  61.05.cp (X-ray diffraction)  
  68.37.Lp (Transmission electron microscopy (TEM))  
  78.66.Nk (Insulators)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No 50240420656)

Cite this article: 

Duan Shu-Qing (段淑卿), Tan Na (谭娜), Zhang Qing-Yu (张庆瑜) Microstructure and photoluminescence of Er-doped SiOx films synthesized by ion beam assisted deposition 2005 Chinese Physics 14 615

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