EFFECTS OF ISLAND-EDGE EXCHANGE BARRIER ON 2D PATTERN FORMATION IN SURFACTANT-MEDIATED EPITAXY
Wang Dai-mu (王戴木)a, Sun Xia (孙霞)b, Wu Zi-qin (吴自勤)b
a Department of Physics, Fuyang Teachers College, Fuyang 236032, China; b Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026, China
Abstract The nucleation and growth of two-dimensional islands in a surfactant-mediated epitaxy system have been studied by computer simulation. To improve the recent results published in the literature, we use a configuration-dependent energy barrier for the exchange process at the island edge in our model. The simulations produce fractal islands at high temperatures or low deposition fluxes, and a transition to regular compact islands occurs at lower temperatures or higher fluxes, in good agreement with the recent experimental results. The barrier for the island-edge exchange has quite a strong effect on the island density as a function of temperature and flux. A small change of the island-edge exchange barrier induces a large variation of the island density in the low-temperature or high-flux region. The flux-dependent island density shows a clear scaling-law behaviour in the intermediate-flux region. The scaling exponent increases evidently as the island-edge exchange barrier increases.
Received: 20 March 2001
Revised: 12 June 2001
Accepted manuscript online:
Fund: Project supported by the Natural Science Foundation of Anhui Province, China (Grant No. 99047217).
Cite this article:
Wang Dai-mu (王戴木), Sun Xia (孙霞), Wu Zi-qin (吴自勤) EFFECTS OF ISLAND-EDGE EXCHANGE BARRIER ON 2D PATTERN FORMATION IN SURFACTANT-MEDIATED EPITAXY 2001 Chinese Physics 10 1043
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