Abstract The oxygen and silicon ions have been obtained respectively from pulsed energetic dense oxygen plasma and silane plasma generated by electrodeless discharge. The oxygen ions have been injected into superconducting Nb films, and the Si ions into superconducting YBCO films in order to investigate the variation of their superconductivity with the ions injected into them. Auger profile data show that the injection depths range from 20 to 40nm in the films, depending on the injection condition and film material. The resistance－temperature relations (R-T curves) indicate that the superconductivity remains unchanged in the photoresist-masked part of the film, but is significantly changed in the exposed part. The evenness of the film surface remains unchanged after injection. This technique may serve as an alternative to the planar inhibiting fabrication technique in the fabrication of the multi-layer structure of superconducting films, and also possibly to the conventional plasma source ion implantation technique in material surface processing.
Received: 29 May 2001
Revised: 11 July 2001
Accepted manuscript online:
Fund: Project supported by the National Centre for R & D on Superconductivity, the Ministry of Science and Technology of China (NKBRSF-G19990646), and the Association for Plasma Studies of China. Also, this work was performed on the theta-pinch equipment by cou
Cite this article:
Xu Feng-zhi (徐凤枝), Chen Geng-hua (陈赓华), Yang Qian-sheng (杨乾声), Ye Mao-fu (叶茂福), Li Yin-an (李银安) SUPERCONDUCTING FILM INJECTED BY IONS FROM PULSED ENERGETIC DENSE PLASMA SOURCE 2001 Chinese Physics 10 1049
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