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Special Issue:
SPECIAL TOPIC — Physics in micro-LED and quantum dots devices
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| TOPICAL REVIEW—Physics in micro-LED and quantum dots devices |
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Review of a direct epitaxial approach to achieving micro-LEDs |
| Yuefei Cai(蔡月飞)1,†, Jie Bai(白洁)2, and Tao Wang(王涛)2,‡ |
1 Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
2 Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield S1 3JD, United Kingdom |
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Abstract There is a significantly increasing demand of developing augmented reality and virtual reality (AR and VR) devices, where micro-LEDs (μLEDs) with a dimension of ≤ 5 μ m are the key elements. Typically, μLEDs are fabricated by dry-etching technologies, unavoidably leading to a severe degradation in optical performance as a result of dry-etching induced damages. This becomes a particularly severe issue when the dimension of LEDs is ≤ 10 μ m. In order to address the fundamental challenge, the Sheffield team has proposed and then developed a direct epitaxial approach to achieving μLEDs, where the dry-etching technologies for the formation of μLED mesas are not needed anymore. This paper provides a review on this technology and then demonstrates a number of monolithically integrated devices on a single chip using this technology.
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Received: 30 July 2022
Revised: 30 August 2022
Accepted manuscript online: 09 September 2022
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| Fund: Project supported by the Engineering and Physical Sciences Research Council (EPSRC), U.K., via EP/P006973/1, EP/T013001/1, and EP/M015181/1. |
Corresponding Authors:
Yuefei Cai, Tao Wang
E-mail: caiyf@sustech.edu.cn;t.wang@sheffield.ac.uk
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Cite this article:
Yuefei Cai(蔡月飞), Jie Bai(白洁), and Tao Wang(王涛) Review of a direct epitaxial approach to achieving micro-LEDs 2023 Chin. Phys. B 32 018508
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