Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃

doi:10.1088/1674-1056/ab8abc

Abstract The formation of cavities in silicon carbide is vitally useful to “smart-cut” and metal gettering in semiconductor industry. In this study, cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 ℃ followed by annealing at 1500 ℃ are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy. The observed cavities and extended defects are related to the implantation temperature. Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT, while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 ℃. The possible reasons are discussed.

Keywords: He implantation cavities extended defects transmission electron microscopy recrystallization

Received: 12 January 2020
Revised: 07 April 2020
Accepted manuscript online:

PACS:	61.80.-x	(Physical radiation effects, radiation damage)
	61.80.Jh	(Ion radiation effects)
	68.37.Lp	(Transmission electron microscopy (TEM))
	78.40.Fy	(Semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. U1832133) and the Doctor Research Foundation of Southwest University of Science and Technology, China (Grant No. 18zx7141).

Corresponding Authors: Bingsheng Li
E-mail: libingshengmvpmvp@163.com

Cite this article:

Qing Liao(廖庆), Bingsheng Li(李炳生), Long Kang(康龙), Xiaogang Li(李小刚) Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃ 2020 Chin. Phys. B 29 076103

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Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃

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