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Amorphous Si critical dimension structures with direct Si lattice calibration |
| Ziruo Wu(吴子若)1, Yanni Cai(蔡燕妮)1, Xingrui Wang(王星睿)1, Longfei Zhang(张龙飞)1, Xiao Deng(邓晓)2, Xinbin Cheng(程鑫彬)1, Tongbao Li(李同保)1 |
1 School of Physics Science and Engineering, Tongji University, Shanghai 200092, China;
2 School of Aerospace Engineering and Applied Mechanics, Tongji University, Shanghai 200092, China |
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Abstract Developing highly accurate critical dimension standards is a significant task for nanoscale metrology. In this paper, we put forward an alternative approach to fabricate amorphous Si critical dimension structures with direct Si lattice calibration in the same frame scanning transmission electron microscopy image. Based on the traceable measurement analysis, the optimized method can provide the same calibration accuracy and increase the fabrication throughput and lower the cost simultaneously, which benefits the application needs in atomic force microscopy (AFM) tip geometry characterization, benchmarking measurement tools, and conducting comparison measurements between different approaches.
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Received: 05 November 2018
Revised: 20 December 2018
Accepted manuscript online:
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PACS:
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06.20.-f
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(Metrology)
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06.20.fb
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(Standards and calibration)
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68.37.Lp
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(Transmission electron microscopy (TEM))
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| Fund: Project supported by the National Key Scientific Instrument and Equipment Development Projects of China (Grant No. 2014YQ090709), the National Key Research and Development Program of China (Grant No. 2016YFA0200902), and Major Projects of Science and Technology Commission of Shanghai, China (Grant No. 17JC1400800). |
Corresponding Authors:
Xiao Deng
E-mail: 1110490dengxiao@tongji.edu.cn
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Cite this article:
Ziruo Wu(吴子若), Yanni Cai(蔡燕妮), Xingrui Wang(王星睿), Longfei Zhang(张龙飞), Xiao Deng(邓晓), Xinbin Cheng(程鑫彬), Tongbao Li(李同保) Amorphous Si critical dimension structures with direct Si lattice calibration 2019 Chin. Phys. B 28 030601
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