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CN 11-5639/O4
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Other articles related with "78.40.Fy":
87803 Lei Niu, Yimin Chen, Xiang Shen, Tiefeng Xu
  Thermal stability of magnetron sputtering Ge-Ga-S films
    Chin. Phys. B   2020 Vol.29 (8): 87803-087803 [Abstract] (19) [HTML 1 KB] [PDF 626 KB] (21)
76103 Qing Liao, Bingsheng Li, Long Kang, Xiaogang Li
  Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 ℃
    Chin. Phys. B   2020 Vol.29 (7): 76103-076103 [Abstract] (36) [HTML 1 KB] [PDF 5017 KB] (44)
57504 Huanming Wang, Sen Sun, Jiayin Xu, Xiaowei Lv, Yuan Wang, Yong Peng, Xi Zhang, Gang Xiang
  Microstructure and ferromagnetism ofheavily Mn doped SiGe thin flims
    Chin. Phys. B   2020 Vol.29 (5): 57504-057504 [Abstract] (129) [HTML 1 KB] [PDF 3605 KB] (180)
17801 Li-Bo Liu, Hong-Xiang Deng, Xiao-Tao Zu, Xiao-Dong Yuan, Wan-Guo Zheng
  Non-parabolic effect for femtosecond laser-induced ultrafast electro-absorption in solids
    Chin. Phys. B   2020 Vol.29 (1): 17801-017801 [Abstract] (101) [HTML 1 KB] [PDF 542 KB] (73)
77801 Xiaowei Yu, Huiayuan Cui, Maodong Zhu, Zhilin Xia, Qinglin Sai
  Influence of annealing treatment on the luminescent properties of Ta:β-Ga2O3 single crystal
    Chin. Phys. B   2019 Vol.28 (7): 77801-077801 [Abstract] (140) [HTML 1 KB] [PDF 572 KB] (80)
57802 Xuee An, Zhengjun Shang, Chuanhe Ma, Xinhe Zheng, Cuiling Zhang, Lin Sun, Fangyu Yue, Bo Li, Ye Chen
  Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer
    Chin. Phys. B   2019 Vol.28 (5): 57802-057802 [Abstract] (111) [HTML 1 KB] [PDF 522 KB] (87)
17803 Ying Li, Zhi-Feng Shi, Xin-Jian Li, Chong-Xin Shan
  Photodetectors based on inorganic halide perovskites: Materials and devices
    Chin. Phys. B   2019 Vol.28 (1): 17803-017803 [Abstract] (150) [HTML 1 KB] [PDF 3520 KB] (551)
127803 Shuang-Tao Liu, Jing Yang, De-Gang Zhao, De-Sheng Jiang, Feng Liang, Ping Chen, Jian-Jun Zhu, Zong-Shun Liu, Wei Liu, Yao Xing, Li-Yuan Peng, Li-Qun Zhang, Wen-Jie Wang, Mo Li
  Influence of carrier gas H2 flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures
    Chin. Phys. B   2018 Vol.27 (12): 127803-127803 [Abstract] (116) [HTML 1 KB] [PDF 471 KB] (110)
98502 Xia Guo, Qiao-Li Liu, Hui-Jun Tian, Chun-Wei Guo, Chong Li, An-Qi Hu, Xiao-Ying He, Hua Wu
  Efficiency-enhanced AlGaInP light-emitting diodes using transparent plasmonic silver nanowires
    Chin. Phys. B   2018 Vol.27 (9): 98502-098502 [Abstract] (151) [HTML 1 KB] [PDF 1335 KB] (166)
48504 Xu-Yang Li, Zhi-Nong Yu, Jin Cheng, Yong-Hua Chen, Jian-She Xue, Jian Guo, Wei Xue
  Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
    Chin. Phys. B   2018 Vol.27 (4): 48504-048504 [Abstract] (177) [HTML 1 KB] [PDF 4283 KB] (165)
94211 Chang-Bao Huang, Hai-Xin Wu, You-Bao Ni, Zhen-You Wang, Shi-Jing Chen
  Optical and defect properties of S-doped and Al-doped GaSe crystals
    Chin. Phys. B   2017 Vol.26 (9): 94211-094211 [Abstract] (176) [HTML 0 KB] [PDF 1417 KB] (180)
96301 Hai-Ming Huang, Zhen-Yi Jiang, Shi-Jun Luo
  First-principles investigations on the mechanical, thermal,electronic, and optical properties of the defect perovskites Cs2SnX6 (X= Cl, Br, I)
    Chin. Phys. B   2017 Vol.26 (9): 96301-096301 [Abstract] (215) [HTML 1 KB] [PDF 661 KB] (669)
67804 Qi Ding, Xiao-Song Zhang, Lan Li, Jian-Ping Xu, Ping Zhou, Xiao-Fei Dong, Ming Yan
  Temperature-dependent photoluminescence of size-tunable ZnAgInSe quaternary quantum dots
    Chin. Phys. B   2017 Vol.26 (6): 67804-067804 [Abstract] (156) [HTML 1 KB] [PDF 979 KB] (251)
127103 Jun-Hong Guo, Ting-Hui Li, Fang-Ren Hu, Li-Zhe Liu
  Identification of surface oxygen vacancy-related phonon-plasmon coupling in TiO2 single crystal
    Chin. Phys. B   2016 Vol.25 (12): 127103-127103 [Abstract] (152) [HTML 1 KB] [PDF 603 KB] (199)
77503 Bi-Juan Chen, Zheng Deng, Xian-Cheng Wang, Shao-Min Feng, Zhen Yuan, Si-Jia Zhang, Qing-Qing Liu, Chang-Qing Jin
  Structural stability at high pressure, electronic, and magnetic properties of BaFZnAs: A new candidate of host material of diluted magnetic semiconductors
    Chin. Phys. B   2016 Vol.25 (7): 77503-077503 [Abstract] (220) [HTML 1 KB] [PDF 890 KB] (445)
24211 Zhang Dong-Liang, Cheng Bu-Wen, Xue Chun-Lai, Zhang Xu, Cong Hui, Liu Zhi, Zhang Guang-Ze, Wang Qi-Ming
  Theoretical study of the optical gain characteristics of a Ge1-xSnx alloy for a short-wave infrared laser
    Chin. Phys. B   2015 Vol.24 (2): 24211-024211 [Abstract] (264) [HTML 0 KB] [PDF 359 KB] (380)
124215 Cao Chen, Zhang Bing, Wu Long-Sheng, Li Na, Wang Jun-Feng
  A quantum efficiency analytical model for complementary metal–oxide–semiconductor image pixels with a pinned photodiode structure
    Chin. Phys. B   2014 Vol.23 (12): 124215-124215 [Abstract] (174) [HTML 1 KB] [PDF 594 KB] (450)
117804 Liu Xiao-Juan, Zhang Xiao-Song, Li Lan, Wang Xue-Liang, Yuan Lin-Lin
  Fabrication and temperature-dependent photoluminescence spectra of Zn-Cu-In-S quaternary nanocrystals
    Chin. Phys. B   2014 Vol.23 (11): 117804-117804 [Abstract] (138) [HTML 1 KB] [PDF 1357 KB] (929)
68801 Yang Jing, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Li Liang, Wu Liang-Liang, Le Ling-Cong, Li Xiao-Jing, He Xiao-Guang, Wang Hui, Zhu Jian-Jun, Zhang Shu-Ming, Zhang Bao-Shun, Yang Hui
  Effects of polarization and p-type GaN resistivity on the spectral response of InGaN/GaN multiple quantum well solar cells
    Chin. Phys. B   2014 Vol.23 (6): 68801-068801 [Abstract] (183) [HTML 1 KB] [PDF 429 KB] (448)
27304 Zhang Jie, Yu Jin-Ling, Cheng Shu-Ying, Lai Yun-Feng, Chen Yong-Hai
  Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence
    Chin. Phys. B   2014 Vol.23 (2): 27304-027304 [Abstract] (195) [HTML 1 KB] [PDF 250 KB] (406)
27801 Deng Hong-Xiang, Zu Hao-Yue, Wu Shao-Yi, Sun Kai, Zu Xiao-Tao
  Red-shift law of intense laser-induced electro-absorption in solids
    Chin. Phys. B   2014 Vol.23 (2): 27801-027801 [Abstract] (179) [HTML 1 KB] [PDF 357 KB] (708)
98801 Yang Jing, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Li Liang, Wu Liang-Liang, Le Ling-Cong, Li Xiao-Jing, He Xiao-Guang, Wang Hui, Zhu Jian-Jun, Zhang Shu-Ming, Zhang Bao-Shun, Yang Hui
  Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime
    Chin. Phys. B   2013 Vol.22 (9): 98801-098801 [Abstract] (207) [HTML 1 KB] [PDF 446 KB] (599)
68802 Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui
  The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells
    Chin. Phys. B   2013 Vol.22 (6): 68802-068802 [Abstract] (354) [HTML 1 KB] [PDF 276 KB] (996)
57801 Wang Qing, Liang Ji-Feng, Zhang Ren-Hui, Li Qiang, Dai Jian-Feng
  First-principle study on optical properties of N-La-codoped anatase TiO
    Chin. Phys. B   2013 Vol.22 (5): 57801-057801 [Abstract] (227) [HTML 1 KB] [PDF 2076 KB] (1063)
47803 Zhang Guo-Heng, Deng Xiao-Yan, Xue Hua, Xiang Gang
  Engineering of electronic and optical properties of ZnO thin films via Cu doping
    Chin. Phys. B   2013 Vol.22 (4): 47803-047803 [Abstract] (289) [HTML 1 KB] [PDF 299 KB] (1662)
27802 Li Deng-Yue, Li Hong-Tao, Sun He-Hui, Zhao Lian-Cheng
  Effects of rapid thermal annealing on the morphology and optical properity of ultrathin InSb film deposited on SiO2/Si substrate
    Chin. Phys. B   2013 Vol.22 (2): 27802-027802 [Abstract] (356) [HTML 1 KB] [PDF 1524 KB] (1065)
88502 Zhang Qian, Zhang Yu-Ming, Yuan Lei, Zhang Yi-Men, Tang Xiao-Yan, Song Qing-Wen
  Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer
    Chin. Phys. B   2012 Vol.21 (8): 88502-088502 [Abstract] (950) [HTML 1 KB] [PDF 907 KB] (1191)
78104 Jijoy. P. Mathew, George Varghese, Jacob Mathew
  Effect of post thermal annealing on the structural and optical properties of ZnO thin films prepared from polymer precursor
    Chin. Phys. B   2012 Vol.21 (7): 78104-078104 [Abstract] (993) [HTML 1 KB] [PDF 227 KB] (1806)
56104 Wang Ying,Jiao Wen-Li,Hu Hai-Fan,Liu Yun-Tao,Cao Fei
  A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier
    Chin. Phys. B   2012 Vol.21 (5): 56104-056104 [Abstract] (1065) [HTML 1 KB] [PDF 216 KB] (534)
37301 Gu Li-Ying,Li Yan-Fang,Chu Wei-Dong,Wei Ying-Hui
  Topological structure effect on far-infrared spectra in a GaAs/InAs nanoring
    Chin. Phys. B   2012 Vol.21 (3): 37301-037301 [Abstract] (707) [HTML 1 KB] [PDF 396 KB] (576)
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