Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2020, Vol. 29 Issue (2): 026101    DOI: 10.1088/1674-1056/ab5fc4
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device
Bing Ye(叶兵)1, Li-Hua Mo(莫莉华)1,2, Tao Liu(刘涛)3, Jie Luo(罗捷)1, Dong-Qing Li(李东青)1,2, Pei-Xiong Zhao(赵培雄)1,2, Chang Cai(蔡畅)1,2, Ze He(贺泽)1,2, You-Mei Sun(孙友梅)1, Ming-Dong Hou(侯明东)1, Jie Liu(刘杰)1
1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn