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Chin. Phys. B, 2021, Vol. 30(7): 070702    DOI: 10.1088/1674-1056/abe2fd
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A comparative study on radiation reliability of composite channel InP high electron mobility transistors

Jia-Jia Zhang(张佳佳)1, Peng Ding(丁芃)2, Ya-Nan Jin(靳雅楠)1, Sheng-Hao Meng(孟圣皓)1, Xiang-Qian Zhao(赵向前)1, Yan-Fei Hu(胡彦飞)3, Ying-Hui Zhong(钟英辉)1,†, and Zhi Jin(金智)2
1 School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 Microelectronics Institute, Xidian University, Xi'an 710071, China
Abstract  This paper proposes a reasonable radiation-resistant composite channel structure for InP HEMTs. The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement. Moreover, the direct current (DC) and radio frequency (RF) characteristics and their reliability between the single channel structure and the composite channel structure after 75-keV proton irradiation are compared in detail. The results show that the composite channel structure has excellent radiation tolerance. Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect. This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.
Keywords:  proton irradiation      composite channel      InP HEMTs      TCAD modeling  
Received:  03 November 2020      Revised:  07 January 2021      Accepted manuscript online:  04 February 2021
PACS:  07.05.Tp (Computer modeling and simulation)  
  72.80.Ey (III-V and II-VI semiconductors)  
  72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping)  
  95.30.Gv (Radiation mechanisms; polarization)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11775191), the Natural Science Foundation of Henan Province, China (Grant No. 202300410379), the Promotion Funding for Excellent Young Backbone Teacher of Henan Province, China (Grant No. 2019GGJS017), Key Technologies Research and Development Program of Henan Province, China (Grant No.202102210321), and the Promotion Project for Physics Discipline in Zhengzhou University, China (Grant No. 2018WLTJ01).
Corresponding Authors:  Ying-Hui Zhong     E-mail:

Cite this article: 

Jia-Jia Zhang(张佳佳), Peng Ding(丁芃), Ya-Nan Jin(靳雅楠), Sheng-Hao Meng(孟圣皓), Xiang-Qian Zhao(赵向前), Yan-Fei Hu(胡彦飞), Ying-Hui Zhong(钟英辉), and Zhi Jin(金智) A comparative study on radiation reliability of composite channel InP high electron mobility transistors 2021 Chin. Phys. B 30 070702

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