Chin. Phys. B
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Chin. Phys. B  2018, Vol. 27 Issue (8): 088106    DOI: 10.1088/1674-1056/27/8/088106
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors
Liu-Hong Ma(马刘红)1,3, Wei-Hua Han(韩伟华)2,3, Xiao-Song Zhao(赵晓松)2,3, Yang-Yan Guo(郭仰岩)2,3, Ya-Mei Dou(窦亚梅)2,3, Fu-Hua Yang(杨富华)3,4
1 School of Physical Engineering, Zhengzhou University, Zhengzhou 450001, China;
2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3 Engineering Research Center for Semiconductor Integrated Technology, Beijing Engineering Center of Semiconductor Micro-Nano Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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