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CN 11-5639/O4
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Other articles related with "85.30.Tv":
118501 Zhang Zhou, Liangmei Wu, Jiancui Chen, Jiajun Ma, Yuan Huang, Chengmin Shen, Lihong Bao, Hong-Jun Gao
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107401 Bin Wang, Sheng Hu, Yue Feng, Peng Li, Hui-Yong Hu, Bin Shu
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108502 Hui-Fang Xu, Xin-Feng Han, Wen Sun
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    Chin. Phys. B   2020 Vol.29 (10): 108502-108502 [Abstract] (6) [HTML 1 KB] [PDF 648 KB] (2)
98101 Xiang Wang, Chen Ge, Ge Li, Er-Jia Guo, Meng He, Can Wang, Guo-Zhen Yang, Kui-Juan Jin
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    Chin. Phys. B   2020 Vol.29 (9): 98101-098101 [Abstract] (58) [HTML 1 KB] [PDF 649 KB] (105)
87305 Sheng Hu, Ling Yang, Min-Han Mi, Bin Hou, Sheng Liu, Meng Zhang, Mei Wu, Qing Zhu, Sheng Wu, Yang Lu, Jie-Jie Zhu, Xiao-Wei Zhou, Ling Lv, Xiao-Hua Ma, Yue Hao
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    Chin. Phys. B   2020 Vol.29 (8): 87305-087305 [Abstract] (55) [HTML 1 KB] [PDF 744 KB] (40)
78503 Mei-Na Zhang, Yan Shao, Xiao-Lin Wang, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding
  Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
    Chin. Phys. B   2020 Vol.29 (7): 78503-078503 [Abstract] (43) [HTML 1 KB] [PDF 945 KB] (54)
88503 Mei-Na Zhang, Yan Shao, Xiao-Lin Wang, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding
  Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
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57401 Hang Song, Hao Wu, Hai-Yang Lu, Zhi-Hao Yang, Long Ba
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    Chin. Phys. B   2020 Vol.29 (5): 57401-057401 [Abstract] (56) [HTML 1 KB] [PDF 1772 KB] (71)
58501 Zhijun Lyu, Hongliang Lu, Yuming Zhang, Yimen Zhang, Bin Lu, Yi Zhu, Fankang Meng, Jiale Sun
  Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source
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40703 Hai Zhong, Qin-Chao Sun, Guo Li, Jian-Yu Du, He-Yi Huang, Er-Jia Guo, Meng He, Can Wang, Guo-Zhen Yang, Chen Ge, Kui-Juan Jin
  High-performance synaptic transistors for neuromorphic computing
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38104 Liu-Hong Ma, Wei-Hua Han, Fu-Hua Yang
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38503 Jia-Fei Yao, Yu-Feng Guo, Zhen-Yu Zhang, Ke-Meng Yang, Mao-Lin Zhang, Tian Xia
  Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars
    Chin. Phys. B   2020 Vol.29 (3): 38503-038503 [Abstract] (85) [HTML 1 KB] [PDF 637 KB] (86)
38505 Xian-Le Zhang, Peng-Ying Chang, Gang Du, Xiao-Yan Liu
  Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs
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107301 Mei Ge, Qing Cai, Bao-Hua Zhang, Dun-Jun Chen, Li-Qun Hu, Jun-Jun Xue, Hai Lu, Rong Zhang, You-Dou Zheng
  Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer
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107303 Yang-Yan Guo, Wei-Hua Han, Xiao-Song Zhao, Ya-Mei Dou, Xiao-Di Zhang, Xin-Yu Wu, Fu-Hua Yang
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108501 Hui-Fang Xu, Jian Cui, Wen Sun, Xin-Feng Han
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87302 Wenxing Huo, Zengxia Mei, Yicheng Lu, Zuyin Han, Rui Zhu, Tao Wang, Yanxin Sui, Huili Liang, Xiaolong Du
  Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
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68504 Zheng-Xin Wen, Feng Zhang, Zhan-Wei Shen, Jun Chen, Ya-Wei He, Guo-Guo Yan, Xing-Fang Liu, Wan-Shun Zhao, Lei Wang, Guo-Sheng Sun, Yi-Ping Zeng
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47302 Tie-Cheng Han, Hong-Dong Zhao, Xiao-Can Peng
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27302 Hao Wu, Bao-Xing Duan, Luo-Yun Yang, Yin-Tang Yang
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18505 Ru Han, Hai-Chao Zhang, Dang-Hui Wang, Cui Li
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97310 Xiao-Song Zhao, Wei-Hua Han, Yang-Yan Guo, Ya-Mei Dou, Fu-Hua Yang
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98501 Jin-Shun Bi, Kai Xi, Bo Li, Hai-Bin Wang, Lan-Long Ji, Jin Li, Ming Liu
  Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory
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87308 Hui-De Wang, David K Sang, Zhi-Nan Guo, Rui Cao, Jin-Lai Zhao, Muhammad Najeeb Ullah Shah, Tao-Jian Fan, Dian-Yuan Fan, Han Zhang
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88106 Liu-Hong Ma, Wei-Hua Han, Xiao-Song Zhao, Yang-Yan Guo, Ya-Mei Dou, Fu-Hua Yang
  Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors
    Chin. Phys. B   2018 Vol.27 (8): 88106-088106 [Abstract] (192) [HTML 0 KB] [PDF 2083 KB] (130)
88501 Weizhong Chen, Yao Huang, Lijun He, Zhengsheng Han, Yi Huang
  A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design
    Chin. Phys. B   2018 Vol.27 (8): 88501-088501 [Abstract] (178) [HTML 1 KB] [PDF 800 KB] (131)
78502 Cong Li, Zhi-Rui Yan, Yi-Qi Zhuang, Xiao-Long Zhao, Jia-Min Guo
  Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
    Chin. Phys. B   2018 Vol.27 (7): 78502-078502 [Abstract] (169) [HTML 0 KB] [PDF 1485 KB] (139)
66105 Zhi-Feng Lei, Zhan-Gang Zhang, Yun-Fei En, Yun Huang
  Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool
    Chin. Phys. B   2018 Vol.27 (6): 66105-066105 [Abstract] (180) [HTML 1 KB] [PDF 1455 KB] (145)
67402 Bin Wang, He-Ming Zhang, Hui-Yong Hu, Xiao-Wei Shi
  Enhancement of off-state characteristics in junctionless field effect transistor using a field plate
    Chin. Phys. B   2018 Vol.27 (6): 67402-067402 [Abstract] (200) [HTML 0 KB] [PDF 628 KB] (144)
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