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CN 11-5639/O4
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Other articles related with "85.30.Tv":
87302 Wenxing Huo, Zengxia Mei, Yicheng Lu, Zuyin Han, Rui Zhu, Tao Wang, Yanxin Sui, Huili Liang, Xiaolong Du
  Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
    Chin. Phys. B   2019 Vol.28 (8): 87302-087302 [Abstract] (53) [HTML 1 KB] [PDF 1824 KB] (33)
88502 Chao-Yang Han, Yuan Liu, Yu-Rong Liu, Ya-Yi Chen, Li Wang, Rong-Sheng Chen
  Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors
    Chin. Phys. B   2019 Vol.28 (8): 88502-088502 [Abstract] (26) [HTML 1 KB] [PDF 558 KB] (32)
68504 Zheng-Xin Wen, Feng Zhang, Zhan-Wei Shen, Jun Chen, Ya-Wei He, Guo-Guo Yan, Xing-Fang Liu, Wan-Shun Zhao, Lei Wang, Guo-Sheng Sun, Yi-Ping Zeng
  Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
    Chin. Phys. B   2019 Vol.28 (6): 68504-068504 [Abstract] (43) [HTML 1 KB] [PDF 1521 KB] (39)
47302 Tie-Cheng Han, Hong-Dong Zhao, Xiao-Can Peng
  Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
    Chin. Phys. B   2019 Vol.28 (4): 47302-047302 [Abstract] (75) [HTML 1 KB] [PDF 496 KB] (51)
27302 Hao Wu, Bao-Xing Duan, Luo-Yun Yang, Yin-Tang Yang
  Theoretical analytic model for RESURF AlGaN/GaN HEMTs
    Chin. Phys. B   2019 Vol.28 (2): 27302-027302 [Abstract] (141) [HTML 1 KB] [PDF 504 KB] (69)
18505 Ru Han, Hai-Chao Zhang, Dang-Hui Wang, Cui Li
  Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
    Chin. Phys. B   2019 Vol.28 (1): 18505-018505 [Abstract] (123) [HTML 1 KB] [PDF 792 KB] (50)
97310 Xiao-Song Zhao, Wei-Hua Han, Yang-Yan Guo, Ya-Mei Dou, Fu-Hua Yang
  Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors
    Chin. Phys. B   2018 Vol.27 (9): 97310-097310 [Abstract] (152) [HTML 1 KB] [PDF 2113 KB] (59)
98501 Jin-Shun Bi, Kai Xi, Bo Li, Hai-Bin Wang, Lan-Long Ji, Jin Li, Ming Liu
  Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory
    Chin. Phys. B   2018 Vol.27 (9): 98501-098501 [Abstract] (96) [HTML 1 KB] [PDF 774 KB] (67)
87308 Hui-De Wang, David K Sang, Zhi-Nan Guo, Rui Cao, Jin-Lai Zhao, Muhammad Najeeb Ullah Shah, Tao-Jian Fan, Dian-Yuan Fan, Han Zhang
  Black phosphorus-based field effect transistor devices for Ag ions detection
    Chin. Phys. B   2018 Vol.27 (8): 87308-087308 [Abstract] (94) [HTML 1 KB] [PDF 2698 KB] (83)
88106 Liu-Hong Ma, Wei-Hua Han, Xiao-Song Zhao, Yang-Yan Guo, Ya-Mei Dou, Fu-Hua Yang
  Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors
    Chin. Phys. B   2018 Vol.27 (8): 88106-088106 [Abstract] (123) [HTML 0 KB] [PDF 2083 KB] (61)
88501 Weizhong Chen, Yao Huang, Lijun He, Zhengsheng Han, Yi Huang
  A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design
    Chin. Phys. B   2018 Vol.27 (8): 88501-088501 [Abstract] (100) [HTML 1 KB] [PDF 800 KB] (74)
78502 Cong Li, Zhi-Rui Yan, Yi-Qi Zhuang, Xiao-Long Zhao, Jia-Min Guo
  Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
    Chin. Phys. B   2018 Vol.27 (7): 78502-078502 [Abstract] (120) [HTML 0 KB] [PDF 1485 KB] (62)
66105 Zhi-Feng Lei, Zhan-Gang Zhang, Yun-Fei En, Yun Huang
  Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool
    Chin. Phys. B   2018 Vol.27 (6): 66105-066105 [Abstract] (105) [HTML 1 KB] [PDF 1455 KB] (87)
67402 Bin Wang, He-Ming Zhang, Hui-Yong Hu, Xiao-Wei Shi
  Enhancement of off-state characteristics in junctionless field effect transistor using a field plate
    Chin. Phys. B   2018 Vol.27 (6): 67402-067402 [Abstract] (109) [HTML 0 KB] [PDF 628 KB] (97)
68504 Li Wang, Yuan Liu, Kui-Wei Geng, Ya-Yi Chen, Yun-Fei En
  Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors
    Chin. Phys. B   2018 Vol.27 (6): 68504-068504 [Abstract] (83) [HTML 0 KB] [PDF 1319 KB] (150)
68505 Yu-Qian Liu, Chang-Chun Chai, Yu-Hang Zhang, Chun-Lei Shi, Yang Liu, Qing-Yang Fan, Yin-Tang Yang
  Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter
    Chin. Phys. B   2018 Vol.27 (6): 68505-068505 [Abstract] (82) [HTML 0 KB] [PDF 887 KB] (68)
47305 Wei Mao, Hai-Yong Wang, Peng-Hao Shi, Xiao-Fei Wang, Ming Du, Xue-Feng Zheng, Chong Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
    Chin. Phys. B   2018 Vol.27 (4): 47305-047305 [Abstract] (159) [HTML 1 KB] [PDF 1596 KB] (133)
48503 Li-Hua Dai, Da-Wei Bi, Zhi-Yuan Hu, Xiao-Nian Liu, Meng-Ying Zhang, Zheng-Xuan Zhang, Shi-Chang Zou
  Research on the radiation hardened SOI devices with single-step Si ion implantation
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48504 Xu-Yang Li, Zhi-Nong Yu, Jin Cheng, Yong-Hua Chen, Jian-She Xue, Jian Guo, Wei Xue
  Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
    Chin. Phys. B   2018 Vol.27 (4): 48504-048504 [Abstract] (137) [HTML 1 KB] [PDF 4283 KB] (114)
127102 Peng Cui, Zhao-Jun Lin, Chen Fu, Yan Liu, Yuan-Jie Lv
  Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
    Chin. Phys. B   2017 Vol.26 (12): 127102-127102 [Abstract] (127) [HTML 0 KB] [PDF 495 KB] (107)
128101 Dong-Yu Qi, Dong-Li Zhang, Ming-Xiang Wang
  Positive gate bias stress-induced hump-effect in elevated-metal metal-oxide thin film transistors
    Chin. Phys. B   2017 Vol.26 (12): 128101-128101 [Abstract] (107) [HTML 0 KB] [PDF 443 KB] (242)
107301 Tie-Cheng Han, Hong-Dong Zhao, Lei Yang, Yang Wang
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    Chin. Phys. B   2017 Vol.26 (10): 107301-107301 [Abstract] (150) [HTML 1 KB] [PDF 349 KB] (372)
96103 Qiwen Zheng, Jiangwei Cui, Mengxin Liu, Dandan Su, Hang Zhou, Teng Ma, Xuefeng Yu, Wu Lu, Qi Guo, Fazhan Zhao
  Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
    Chin. Phys. B   2017 Vol.26 (9): 96103-096103 [Abstract] (136) [HTML 0 KB] [PDF 432 KB] (192)
98401 Xingxing Zhang, Xiaoli Ji, Yiming Liao, Jingyu Peng, Chenxin Zhu, Feng Yan
  Performance enhancement of CMOS terahertz detector by drain current
    Chin. Phys. B   2017 Vol.26 (9): 98401-098401 [Abstract] (138) [HTML 1 KB] [PDF 612 KB] (173)
98504 Jianfei Li, Yuanjie Lv, Changfu Li, Ziwu Ji, Zhiyong Pang, Xiangang Xu, Mingsheng Xu
  Intrinsic relationship between photoluminescence and electrical characteristics in modulation Fe-doped AlGaN/GaN HEMTs
    Chin. Phys. B   2017 Vol.26 (9): 98504-098504 [Abstract] (148) [HTML 0 KB] [PDF 937 KB] (210)
98505 Wei-Wei Yan, Lin-Chun Gao, Xiao-Jing Li, Fa-Zhan Zhao, Chuan-Bin Zeng, Jia-Jun Luo, Zheng-Sheng Han
  Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
    Chin. Phys. B   2017 Vol.26 (9): 98505-098505 [Abstract] (158) [HTML 0 KB] [PDF 2992 KB] (157)
87304 Yanrong Wang, Hong Yang, Hao Xu, Weichun Luo, Luwei Qi, Shuxiang Zhang, Wenwu Wang, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye
  Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process
    Chin. Phys. B   2017 Vol.26 (8): 87304-087304 [Abstract] (133) [HTML 1 KB] [PDF 1310 KB] (149)
78502 Wen-Hao Zhang, Zun-Chao Li, Yun-He Guan, Ye-Fei Zhang
  Double-gate-all-around tunnel field-effect transistor
    Chin. Phys. B   2017 Vol.26 (7): 78502-078502 [Abstract] (133) [HTML 1 KB] [PDF 429 KB] (147)
58501 He Guan, Hui Guo
  An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect
    Chin. Phys. B   2017 Vol.26 (5): 58501-058501 [Abstract] (115) [HTML 0 KB] [PDF 1375 KB] (105)
58502 Yu-Hang Zhang, Chang-Chun Chai, Yang Liu, Yin-Tang Yang, Chun-Lei Shi, Qing-Yang Fan, Yu-Qian Liu
  Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter
    Chin. Phys. B   2017 Vol.26 (5): 58502-058502 [Abstract] (123) [HTML 0 KB] [PDF 1101 KB] (166)
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