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CN 11-5639/O4
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Other articles related with "85.30.Tv":
78503 Mei-Na Zhang, Yan Shao, Xiao-Lin Wang, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding
  Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
    Chin. Phys. B   2020 Vol.29 (7): 78503-078503 [Abstract] (21) [HTML 1 KB] [PDF 945 KB] (19)
88503 Mei-Na Zhang, Yan Shao, Xiao-Lin Wang, Xiaohan Wu, Wen-Jun Liu, Shi-Jin Ding
  Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
    Chin. Phys. B   0 Vol. (): 88503-088503 [Abstract] (13) [HTML 0 KB] [PDF 818 KB] (32)
57401 Hang Song, Hao Wu, Hai-Yang Lu, Zhi-Hao Yang, Long Ba
  Application of graphene vertical field effect to regulation of organic light-emitting transistors
    Chin. Phys. B   2020 Vol.29 (5): 57401-057401 [Abstract] (40) [HTML 1 KB] [PDF 1772 KB] (46)
58501 Zhijun Lyu, Hongliang Lu, Yuming Zhang, Yimen Zhang, Bin Lu, Yi Zhu, Fankang Meng, Jiale Sun
  Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source
    Chin. Phys. B   2020 Vol.29 (5): 58501-058501 [Abstract] (40) [HTML 1 KB] [PDF 606 KB] (49)
40703 Hai Zhong, Qin-Chao Sun, Guo Li, Jian-Yu Du, He-Yi Huang, Er-Jia Guo, Meng He, Can Wang, Guo-Zhen Yang, Chen Ge, Kui-Juan Jin
  High-performance synaptic transistors for neuromorphic computing
    Chin. Phys. B   2020 Vol.29 (4): 40703-040703 [Abstract] (328) [HTML 1 KB] [PDF 7578 KB] (331)
38104 Liu-Hong Ma, Wei-Hua Han, Fu-Hua Yang
  Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors
    Chin. Phys. B   2020 Vol.29 (3): 38104-038104 [Abstract] (55) [HTML 1 KB] [PDF 2676 KB] (62)
38503 Jia-Fei Yao, Yu-Feng Guo, Zhen-Yu Zhang, Ke-Meng Yang, Mao-Lin Zhang, Tian Xia
  Numerical and analytical investigations for the SOI LDMOS with alternated high-k dielectric and step doped silicon pillars
    Chin. Phys. B   2020 Vol.29 (3): 38503-038503 [Abstract] (55) [HTML 1 KB] [PDF 637 KB] (59)
38505 Xian-Le Zhang, Peng-Ying Chang, Gang Du, Xiao-Yan Liu
  Role of remote Coulomb scattering on the hole mobility at cryogenic temperatures in SOI p-MOSFETs
    Chin. Phys. B   2020 Vol.29 (3): 38505-038505 [Abstract] (57) [HTML 1 KB] [PDF 667 KB] (79)
107301 Mei Ge, Qing Cai, Bao-Hua Zhang, Dun-Jun Chen, Li-Qun Hu, Jun-Jun Xue, Hai Lu, Rong Zhang, You-Dou Zheng
  Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer
    Chin. Phys. B   2019 Vol.28 (10): 107301-107301 [Abstract] (87) [HTML 1 KB] [PDF 1005 KB] (136)
107303 Yang-Yan Guo, Wei-Hua Han, Xiao-Song Zhao, Ya-Mei Dou, Xiao-Di Zhang, Xin-Yu Wu, Fu-Hua Yang
  Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in siliconjunctionless nanowire transistors
    Chin. Phys. B   2019 Vol.28 (10): 107303-107303 [Abstract] (75) [HTML 1 KB] [PDF 1057 KB] (58)
108501 Hui-Fang Xu, Jian Cui, Wen Sun, Xin-Feng Han
  Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambipolar nature and improving radio-frequency performance
    Chin. Phys. B   2019 Vol.28 (10): 108501-108501 [Abstract] (103) [HTML 1 KB] [PDF 564 KB] (95)
87302 Wenxing Huo, Zengxia Mei, Yicheng Lu, Zuyin Han, Rui Zhu, Tao Wang, Yanxin Sui, Huili Liang, Xiaolong Du
  Effects of active layer thickness on performance and stability of dual-active-layer amorphous InGaZnO thin-film transistors
    Chin. Phys. B   2019 Vol.28 (8): 87302-087302 [Abstract] (163) [HTML 1 KB] [PDF 1824 KB] (78)
88502 Chao-Yang Han, Yuan Liu, Yu-Rong Liu, Ya-Yi Chen, Li Wang, Rong-Sheng Chen
  Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors
    Chin. Phys. B   2019 Vol.28 (8): 88502-088502 [Abstract] (103) [HTML 1 KB] [PDF 558 KB] (89)
68504 Zheng-Xin Wen, Feng Zhang, Zhan-Wei Shen, Jun Chen, Ya-Wei He, Guo-Guo Yan, Xing-Fang Liu, Wan-Shun Zhao, Lei Wang, Guo-Sheng Sun, Yi-Ping Zeng
  Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension
    Chin. Phys. B   2019 Vol.28 (6): 68504-068504 [Abstract] (114) [HTML 1 KB] [PDF 1521 KB] (123)
47302 Tie-Cheng Han, Hong-Dong Zhao, Xiao-Can Peng
  Short-gate AlGaN/GaN high-electron mobility transistors with BGaN buffer
    Chin. Phys. B   2019 Vol.28 (4): 47302-047302 [Abstract] (159) [HTML 1 KB] [PDF 496 KB] (123)
27302 Hao Wu, Bao-Xing Duan, Luo-Yun Yang, Yin-Tang Yang
  Theoretical analytic model for RESURF AlGaN/GaN HEMTs
    Chin. Phys. B   2019 Vol.28 (2): 27302-027302 [Abstract] (243) [HTML 1 KB] [PDF 504 KB] (139)
18505 Ru Han, Hai-Chao Zhang, Dang-Hui Wang, Cui Li
  Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer
    Chin. Phys. B   2019 Vol.28 (1): 18505-018505 [Abstract] (195) [HTML 1 KB] [PDF 792 KB] (115)
97310 Xiao-Song Zhao, Wei-Hua Han, Yang-Yan Guo, Ya-Mei Dou, Fu-Hua Yang
  Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors
    Chin. Phys. B   2018 Vol.27 (9): 97310-097310 [Abstract] (220) [HTML 1 KB] [PDF 2113 KB] (102)
98501 Jin-Shun Bi, Kai Xi, Bo Li, Hai-Bin Wang, Lan-Long Ji, Jin Li, Ming Liu
  Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory
    Chin. Phys. B   2018 Vol.27 (9): 98501-098501 [Abstract] (153) [HTML 1 KB] [PDF 774 KB] (98)
87308 Hui-De Wang, David K Sang, Zhi-Nan Guo, Rui Cao, Jin-Lai Zhao, Muhammad Najeeb Ullah Shah, Tao-Jian Fan, Dian-Yuan Fan, Han Zhang
  Black phosphorus-based field effect transistor devices for Ag ions detection
    Chin. Phys. B   2018 Vol.27 (8): 87308-087308 [Abstract] (141) [HTML 1 KB] [PDF 2698 KB] (194)
88106 Liu-Hong Ma, Wei-Hua Han, Xiao-Song Zhao, Yang-Yan Guo, Ya-Mei Dou, Fu-Hua Yang
  Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors
    Chin. Phys. B   2018 Vol.27 (8): 88106-088106 [Abstract] (173) [HTML 0 KB] [PDF 2083 KB] (103)
88501 Weizhong Chen, Yao Huang, Lijun He, Zhengsheng Han, Yi Huang
  A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design
    Chin. Phys. B   2018 Vol.27 (8): 88501-088501 [Abstract] (163) [HTML 1 KB] [PDF 800 KB] (117)
78502 Cong Li, Zhi-Rui Yan, Yi-Qi Zhuang, Xiao-Long Zhao, Jia-Min Guo
  Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric
    Chin. Phys. B   2018 Vol.27 (7): 78502-078502 [Abstract] (157) [HTML 0 KB] [PDF 1485 KB] (121)
66105 Zhi-Feng Lei, Zhan-Gang Zhang, Yun-Fei En, Yun Huang
  Mechanisms of atmospheric neutron-induced single event upsets in nanometric SOI and bulk SRAM devices based on experiment-verified simulation tool
    Chin. Phys. B   2018 Vol.27 (6): 66105-066105 [Abstract] (159) [HTML 1 KB] [PDF 1455 KB] (129)
67402 Bin Wang, He-Ming Zhang, Hui-Yong Hu, Xiao-Wei Shi
  Enhancement of off-state characteristics in junctionless field effect transistor using a field plate
    Chin. Phys. B   2018 Vol.27 (6): 67402-067402 [Abstract] (180) [HTML 0 KB] [PDF 628 KB] (136)
68504 Li Wang, Yuan Liu, Kui-Wei Geng, Ya-Yi Chen, Yun-Fei En
  Degradation of current-voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors
    Chin. Phys. B   2018 Vol.27 (6): 68504-068504 [Abstract] (106) [HTML 0 KB] [PDF 1319 KB] (191)
68505 Yu-Qian Liu, Chang-Chun Chai, Yu-Hang Zhang, Chun-Lei Shi, Yang Liu, Qing-Yang Fan, Yin-Tang Yang
  Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter
    Chin. Phys. B   2018 Vol.27 (6): 68505-068505 [Abstract] (119) [HTML 0 KB] [PDF 887 KB] (114)
47305 Wei Mao, Hai-Yong Wang, Peng-Hao Shi, Xiao-Fei Wang, Ming Du, Xue-Feng Zheng, Chong Wang, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions
    Chin. Phys. B   2018 Vol.27 (4): 47305-047305 [Abstract] (212) [HTML 1 KB] [PDF 1596 KB] (205)
48503 Li-Hua Dai, Da-Wei Bi, Zhi-Yuan Hu, Xiao-Nian Liu, Meng-Ying Zhang, Zheng-Xuan Zhang, Shi-Chang Zou
  Research on the radiation hardened SOI devices with single-step Si ion implantation
    Chin. Phys. B   2018 Vol.27 (4): 48503-048503 [Abstract] (241) [HTML 1 KB] [PDF 1624 KB] (200)
48504 Xu-Yang Li, Zhi-Nong Yu, Jin Cheng, Yong-Hua Chen, Jian-She Xue, Jian Guo, Wei Xue
  Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
    Chin. Phys. B   2018 Vol.27 (4): 48504-048504 [Abstract] (171) [HTML 1 KB] [PDF 4283 KB] (157)
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