Chin. Phys. B
Citation Search Quick Search

ISSN 1674-1056 (Print)
CN 11-5639/O4
About
   » About CPB
   » Editorial Board
   » SCI IF
   » Staff
   » Contact
Browse CPB
   » In Press
   » Current Issue
   » Earlier Issues
   » View by Fields
   » Top Downloaded
   » Sci Top Cited
Authors
   » Submit an Article
   » Manuscript Tracking
   » Call for Papers
   » Scope
   » Instruction for Authors
   » Copyright Agreement
   » Templates
   » Author FAQs
   » PACS
Referees
   » Review Policy
   » Referee Login
   » Referee FAQs
   » Editor in Chief Login
   » Editor Login
   » Office Login
Links
   »
Other articles related with "73.40.-c":
88503 Jing Zeng, Ke-Qiu Chen, Yanhong Zhou
  Exploring how hydrogen at gold-sulfur interface affects spin transport in single-molecule junction
    Chin. Phys. B   2020 Vol.29 (8): 88503-088503 [Abstract] (24) [HTML 1 KB] [PDF 1678 KB] (30)
38104 Liu-Hong Ma, Wei-Hua Han, Fu-Hua Yang
  Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors
    Chin. Phys. B   2020 Vol.29 (3): 38104-038104 [Abstract] (62) [HTML 1 KB] [PDF 2676 KB] (95)
117201 Shuanhu Wang, Gang Li, Jianyuan Wang, Yingyi Tian, Hongrui Zhang, Lvkuan Zou, Jirong Sun, Kexin Jin
  Spin Seebeck effect and spin Hall magnetoresistance in the Pt/Y3Fe5O12 heterostructure under laser-heating
    Chin. Phys. B   2018 Vol.27 (11): 117201-117201 [Abstract] (128) [HTML 1 KB] [PDF 831 KB] (228)
117804 Hong Yan, Zhaoting Zhang, Shuanhu Wang, Kexin Jin
  Review of photoresponsive properties at SrTiO3-based heterointerfaces
    Chin. Phys. B   2018 Vol.27 (11): 117804-117804 [Abstract] (136) [HTML 1 KB] [PDF 6583 KB] (347)
88106 Liu-Hong Ma, Wei-Hua Han, Xiao-Song Zhao, Yang-Yan Guo, Ya-Mei Dou, Fu-Hua Yang
  Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors
    Chin. Phys. B   2018 Vol.27 (8): 88106-088106 [Abstract] (181) [HTML 0 KB] [PDF 2083 KB] (117)
47301 Yan-Peng Hong, Xin-Xin Wang, Guo-Liang Qu, Cheng-Jian Li, Hong-Xia Xue, Ke-Jian Liu, Yong-Chun Li, Chang-Min Xiong, Rui-Fen Dou, Lin He, Jia-Cai Nie
  Conductivity and band alignment of LaCrO3/SrTiO3 (111) heterostructure
    Chin. Phys. B   2018 Vol.27 (4): 47301-047301 [Abstract] (280) [HTML 1 KB] [PDF 830 KB] (161)
127102 Wujisiguleng Bao, Sachuronggui, Fang-Yuan Qiu
  Band offsets engineering at CdxZn1-xS/Cu2ZnSnS4 heterointerface
    Chin. Phys. B   2016 Vol.25 (12): 127102-127102 [Abstract] (225) [HTML 1 KB] [PDF 397 KB] (254)
117402 Yuan Pang(庞远), Junhua Wang(王骏华), Zhaozheng Lyu(吕昭征), Guang Yang(杨光), Jie Fan(樊洁), Guangtong Liu(刘广同), Zhongqing Ji(姬忠庆), Xiunian Jing(景秀年), Changli Yang(杨昌黎), Li Lu(吕力)
  Spatially resolved gap closing in single Josephson junctions constructed on Bi2Te3 surface
    Chin. Phys. B   2016 Vol.25 (11): 117402-117402 [Abstract] (383) [HTML 1 KB] [PDF 1626 KB] (359)
78103 Da-cheng Mao, Zhi Jin, Shao-qing Wang, Da-yong Zhang, Jing-yuan Shi, Song-ang Peng, Xuan-yun Wang
  Depositing aluminum as sacrificial metal to reduce metal-graphene contact resistance
    Chin. Phys. B   2016 Vol.25 (7): 78103-078103 [Abstract] (220) [HTML 1 KB] [PDF 1257 KB] (317)
68103 Liu-Hong Ma, Wei-Hua Han, Hao Wang, Qi-feng Lyu, Wang Zhang, Xiang Yang, Fu-Hua Yang
  Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing
    Chin. Phys. B   2016 Vol.25 (6): 68103-068103 [Abstract] (224) [HTML 1 KB] [PDF 1793 KB] (306)
37301 Yi-Jie Zheng, Jun-Tao Song, Yu-Xian Li
  Suppression of Andreev conductance in a topological insulator-superconductor nanostep junction
    Chin. Phys. B   2016 Vol.25 (3): 37301-037301 [Abstract] (217) [HTML 0 KB] [PDF 370 KB] (263)
37306 Qing-Wen Song, Xiao-Yan Tang, Yan-Jing He, Guan-Nan Tang, Yue-Hu Wang, Yi-Meng Zhang, Hui Guo, Ren-Xu Jia, Hong-Liang Lv, Yi-Men Zhang, Yu-Ming Zhang
  Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors
    Chin. Phys. B   2016 Vol.25 (3): 37306-037306 [Abstract] (263) [HTML 0 KB] [PDF 923 KB] (388)
128101 Ma Liu-Hong, Han Wei-Hua, Wang Hao, Yang Xiang, Yang Fu-Hua
  Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors
    Chin. Phys. B   2015 Vol.24 (12): 128101-128101 [Abstract] (302) [HTML 1 KB] [PDF 1597 KB] (386)
110702 Liu Can-Hua, Jia Jin-Feng
  In situ electrical transport measurement of superconductive ultrathin films
    Chin. Phys. B   2015 Vol.24 (11): 110702-110702 [Abstract] (538) [HTML 1 KB] [PDF 2896 KB] (747)
117303 Wang Jin-Hua, Quan Jun
  Dynamic responses of series parallel-plate mesoscopic capacitors to time-dependent external voltage
    Chin. Phys. B   2015 Vol.24 (11): 117303-117303 [Abstract] (177) [HTML 1 KB] [PDF 290 KB] (236)
67301 He Xiao-Guang, Zhao De-Gang, Jiang De-Sheng
  Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression
    Chin. Phys. B   2015 Vol.24 (6): 67301-067301 [Abstract] (364) [HTML 1 KB] [PDF 473 KB] (2142)
67302 Guan Tong, Benedikt Friess, Li Yong-Qing, Yan Shi-Shen, Vladimir Umansky, Klaus von Klitzing, Jurgen H. Smet
  Disorder-enhanced nuclear spin relaxation at Landau level filling factor one
    Chin. Phys. B   2015 Vol.24 (6): 67302-067302 [Abstract] (217) [HTML 1 KB] [PDF 336 KB] (280)
57303 Ni Yi-Qiang, He Zhi-Yuan, Yao Yao, Yang Fan, Zhou De-Qiu, Zhou Gui-Lin, Shen Zhen, Zhong Jian, Zheng Yue, Zhang Bai-Jun, Liu Yang
  Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate
    Chin. Phys. B   2015 Vol.24 (5): 57303-057303 [Abstract] (238) [HTML 1 KB] [PDF 614 KB] (370)
47203 Muhammad Ammar Khan, Sun Jiu-Xun
  Improvement of mobility edge model by using new density of states with exponential tail for organic diode
    Chin. Phys. B   2015 Vol.24 (4): 47203-047203 [Abstract] (346) [HTML 0 KB] [PDF 364 KB] (449)
37201 Cao Ya-Peng, Hu Yu-Feng, Li Jian-Tao, Ye Hai-Hang, Lü Long-Feng, Ning Yu, Lu Qi-Peng, Tang Ai-Wei, Lou Zhi-Dong, Hou Yan-Bing, Teng Feng
  Electrical bistable devices using composites of zinc sulfide nanoparticles and poly-(N-vinylcarbazole)
    Chin. Phys. B   2015 Vol.24 (3): 37201-037201 [Abstract] (183) [HTML 0 KB] [PDF 557 KB] (363)
17701 Zhang Run-Lan, Chen Chang-Le, Zhang Yun-Jie, Xing Hui, Dong Xiang-Lei, Jin Ke-Xin
  Ferroelectricity in hexagonal YFeO3 film at room temperature
    Chin. Phys. B   2015 Vol.24 (1): 17701-017701 [Abstract] (178) [HTML 0 KB] [PDF 551 KB] (570)
87304 Zhang Ting, Yin Jiang, Zhao Gao-Feng, Zhang Wei-Feng, Xia Yi-Dong, Liu Zhi-Guo
  Bipolar resistance switching in the fully transparent BaSnO3-based memory device
    Chin. Phys. B   2014 Vol.23 (8): 87304-087304 [Abstract] (131) [HTML 1 KB] [PDF 2175 KB] (788)
87811 Xiao Zhi-Hui, Wu Xiao-Ming, Hua Yu-Lin, Bi Wen-Tao, Wang Li, Zhang Xin, Xin Li-Wen, Yin Shou-Gen
  Effect of NaCl doped into Bphen layer on the performance of tandem organic light-emitting diodes
    Chin. Phys. B   2014 Vol.23 (8): 87811-087811 [Abstract] (157) [HTML 1 KB] [PDF 456 KB] (303)
37302 Wen Hui-Juan, Zhang Jin-Cheng, Lu Xiao-Li, Wang Zhi-Zhe, Ha Wei, Ge Sha-Sha, Cao Rong-Tao, Hao Yue
  Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer
    Chin. Phys. B   2014 Vol.23 (3): 37302-037302 [Abstract] (154) [HTML 1 KB] [PDF 878 KB] (471)
127301 Xie Yan-Wu, Hwang Harold Y
  Tuning the electrons at the LaAlO3/SrTiO3 interface:From growth to beyond growth
    Chin. Phys. B   2013 Vol.22 (12): 127301-127301 [Abstract] (465) [HTML 1 KB] [PDF 1831 KB] (1868)
97306 Li Xiao-Guang, Zhang Gu-Feng, Wu Guang-Fen, Chen Hua, Dimitrie Culcer, Zhang Zhen-Yu
  Proximity effects in topological insulator heterostructures
    Chin. Phys. B   2013 Vol.22 (9): 97306-097306 [Abstract] (318) [HTML 1 KB] [PDF 1308 KB] (848)
77304 Quan Jun, Xiao Shi-Fa, Tian Ying
  Contact effect in the dynamic electron transport of two-probe mesoscopic conductor
    Chin. Phys. B   2013 Vol.22 (7): 77304-077304 [Abstract] (204) [HTML 1 KB] [PDF 304 KB] (344)
57106 Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping
  High sensitivity Hall devices with AlSb/InAs quantum well structures
    Chin. Phys. B   2013 Vol.22 (5): 57106-057106 [Abstract] (349) [HTML 1 KB] [PDF 302 KB] (427)
27302 Song Qing-Wen, Zhang Yu-Ming, Han Ji-Sheng, Philip Tanner, Sima Dimitrijev, Zhang Yi-Men, Tang Xiao-Yan, Guo Hui
  The fabrication and characterization of 4H SiC power UMOSFETs
    Chin. Phys. B   2013 Vol.22 (2): 27302-027302 [Abstract] (492) [HTML 1 KB] [PDF 441 KB] (1487)
128502 M. Gökcen, M. Yildirim
  Investigation of inhomogeneous barrier height of Au/Bi4Ti3O12/n-Si structure through Gaussian distribution of barrier height
    Chin. Phys. B   2012 Vol.21 (12): 128502-128502 [Abstract] (551) [HTML 1 KB] [PDF 534 KB] (505)
First page | Prev page | Next page | Last pagePage 1 of 2, 51 records
Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn